"Highly Preferred Carbon Thin Films Obtained by DC Magnetron Sputtering with a Hot Filament"

“通过热灯丝直流磁控溅射获得高度优选的碳薄膜”

基本信息

  • 批准号:
    09650351
  • 负责人:
  • 金额:
    $ 1.79万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
  • 财政年份:
    1997
  • 资助国家:
    日本
  • 起止时间:
    1997 至 1998
  • 项目状态:
    已结题

项目摘要

The purpose of this work is to examine the crystal condition of carbon thin films and to find out the possibility of application to electronic devices as a functional materials.In this work , highly oriented crystalline carbon thin films were obtained using a DC magnetron sputtering system with a tungsten hot filament. Differing from the chemical vapor deposition method using hydrogen as a carrier gas with a hot filament . only pure argon gas was employed. The crystal structure of the carbon thin films was investigated by XRD.XPS, TEM.TED and FE-SEX analysis.Results obtained in this work are as follows :(1) According to XRD analysis, it was confirmed that the crystallized carbon thin films were formed(2) XPS profiles show the contents of the films which were formed by more than 90 % of carbon atoms.(3) As the results of the observation by using TEM, TED and FE-SEX analysis, it was revealed that crystalline carbon films consisted of nano crystal grains and nano fibers.(4) To determine the valence state of the carbon atoms of the films, Laser Raman Spectra was examined and was found to be that the films have three Raman bands at 1581 cm^<-1>,1387cm^<-1> and 1979 cm^<-1> The first two peaks belong to polycrystalline graphite and the last peak corresponds to carbyne, one of the allotropes of carbon.Conclusions : Highly oriented polycrystalline carbon thin films consisting of nano scale fibrous crystallites without hollow inside like carbon nanotubes were grown by DC magnetron hot filament as thermal electron emission source. Carbon thin films thus obtained are considered to be a new type of nano-scale carbon fibrous crystallites and the detection of carbyne is very interesting as one dimensional carbon structure.
为了研究碳薄膜的结晶状态并探索其作为功能材料在电子器件中应用的可能性,本工作采用直流磁控溅射技术和钨灯丝溅射技术制备了高度取向的结晶碳薄膜。不同于使用氢气作为载气的具有热灯丝的化学气相沉积方法。仅使用纯氩气。用XRD、XPS、TEM、TED和FE-SEX等分析手段对碳薄膜的晶体结构进行了研究,结果表明:(1)XRD分析证实了碳薄膜的晶化;(2)XPS分析表明,碳薄膜中90%以上是由碳原子组成的。(3)作为使用TEM、TED和FE-SEX分析的观察结果,揭示了结晶碳膜由纳米晶粒和纳米纤维组成。(4)为了确定薄膜中碳原子的价态,对薄膜进行了激光拉曼光谱分析,发现薄膜在1581 cm ~ <-1>2、1387 cm ~ 2<-1>和1979 cm ~ 2处有三个拉曼峰,<-1>前两个峰属于多晶石墨,最后一个峰对应碳的同素异形体碳炔。采用直流磁控热灯丝作为热电子源,生长出了高度取向的多晶碳薄膜,该薄膜由纳米纤维状微晶组成,内部没有中空的碳纳米管结构排放源。碳薄膜被认为是一种新型的纳米级碳纤维微晶,碳炔作为一维碳结构的检测是非常有趣的。

项目成果

期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Yoshiharu Onuma,Zhanhe Wang,Hironobu Ito,Masato Nakao and Kiichi Kamimura: "Preparation and Piezoresistive Properties of Polycrystalline SnO_2 Films" Japanese Journal of Applied Physics. 37,3,Part 1. 963-964 (1998)
Yoshiharu Onuma、Zhanhe Wang、Hironobu Ito、Masato Nakao和Kiichi Kamimura:“多晶SnO_2薄膜的制备和压阻性能”日本应用物理学杂志。
  • DOI:
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    0
  • 作者:
  • 通讯作者:
Y.Onuma, et al: "Preparation and Piezoresistive Properties of Polycrystalline SnO_2 Films" Japanese Journal of Applied Physics. 37・3 (to be published). (1998)
Y. Onuma等人:“多晶SnO_2薄膜的制备和压阻特性”,日本应用物理学杂志37·3(待出版)。
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    0
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Yoshifumi Kawai,Myo Than Oo,Masato Nakao,Kiichi Kaminura Hisao Matsushima and Yoshiharu Onuma: "Highly preferred crystalline carbon thin films obtained by DC magnetron sputtering with a hot filament" Applied Surface Science. 121/122. 156-159 (1997)
Yoshifumi Kawai、Myo Than Oo、Masato Nakao、Kiichi Kaminura Hisao Matsushima 和 Yoshiharu Onuma:“通过热灯丝直流磁控管溅射获得的高度优选的结晶碳薄膜”应用表面科学。
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    0
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Kiichi Kamimura,Miyako Ohkubo,Toshio Shinomiya,Masato Nakao and Yoshiharu Onuma: "Preparation and Properties of Boron Thin Films" Journal of Solid State Chemistry. 133. 100-103 (1997)
Kiichi Kamimura、Miyako Ohkubo、Toshio Shinomiya、Masato Nakao 和 Yoshiharu Onuma:“硼薄膜的制备和性能”固体化学杂志。
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    0
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K.Kumimura, M.Ohkubo, T.Shinomiya, Y.Onuma: "Preparation and Properties of Borom Thin Films" Journal of Salid State Chemirtry. 133. 100-103 (1997)
K.Kumimura、M.Ohkubo、T.Shinomiya、Y.Onuma:“Borom 薄膜的制备和性能”固体化学杂志。
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ONUMA Yoshiharu其他文献

ONUMA Yoshiharu的其他文献

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{{ truncateString('ONUMA Yoshiharu', 18)}}的其他基金

Preparation of polycrystalline SiC films by dry process and their application to thin film transistors
干法制备多晶SiC薄膜及其在薄膜晶体管中的应用
  • 批准号:
    05452186
  • 财政年份:
    1993
  • 资助金额:
    $ 1.79万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (B)

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  • 批准号:
    6211543
  • 财政年份:
    2000
  • 资助金额:
    $ 1.79万
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