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PMRAM: Initial chip design for a novel non-volatile low-power piezomagnetic random access memory to drive the future of IOT

PMRAM: Initial chip design for a novel non-volatile low-power piezomagnetic random access memory to drive the future of IOT
PMRAM:新型非易失性低功耗压磁随机存取存储器的初始芯片设计,推动物联网的未来
批准号:
10033689
负责人:
金额:
$32.9万
依托单位:
依托单位国家:
英国
项目类别:
Collaborative R&D
财政年份:
2022
资助国家:
英国
项目状态:
已结题
起止时间:
2022 至 --

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英文摘要
LoMaRe was founded in 2017 by four researchers to commercialise the properties of a novel class of material they discovered. Humanity is hitting the physical limitations of current computer storage and memory technologies, the basic foundations of which were designed in the 70ies. Serious hurdles in the further development of these technologies have started to appear in the late 2010s creating performance, cost and environmental(energy consumption) related issues.By using these novel materials, PMRAM allows for storage and manipulations of data combining high performance characteristics of DRAM with nonvolatility of NAND FLASH while maintaining a very low power envelope. In addition, PMRAM outperforms existing and competing emerging memory technologies in speed, density, energy-consumption, and value for money. These characteristics would allow to combine the performance of DRAM and nonvolatility of NAND FLASH into a future storage class memory(SCM) concept. This project will get PMRAM from TRL4 to TRL6\.
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