PMRAM: Initial chip design for a novel non-volatile low-power piezomagnetic random access memory to drive the future of IOT

LoMaRe是由四名研究人员于2017年创立的，目的是将他们发现的一种新型材料的性质商业化。人类正在触及当前计算机存储和存储技术的物理限制，这些技术的基本基础是在70年代设计的。这些技术的进一步发展在2010年代末开始出现严重的障碍，造成了与性能、成本和环境(能源消耗)相关的问题。通过使用这些新材料，PMRAM允许存储和操作数据，结合了DRAM的高性能特性和NAND闪存的非易失性，同时保持非常低的功率包络。此外，PMRAM在速度、密度、能耗和性价比方面都优于现有和竞争对手的新兴存储技术。这些特性将允许将DRAM的性能和NAND闪存的非易失性结合到未来的存储类存储器(SCM)概念中。该项目将获得从TRL4到TRL6的PMRAM。

LoMaRe was founded in 2017 by four researchers to commercialise the properties of a novel class of material they discovered. Humanity is hitting the physical limitations of current computer storage and memory technologies, the basic foundations of which were designed in the 70ies. Serious hurdles in the further development of these technologies have started to appear in the late 2010s creating performance, cost and environmental(energy consumption) related issues.By using these novel materials, PMRAM allows for storage and manipulations of data combining high performance characteristics of DRAM with nonvolatility of NAND FLASH while maintaining a very low power envelope. In addition, PMRAM outperforms existing and competing emerging memory technologies in speed, density, energy-consumption, and value for money. These characteristics would allow to combine the performance of DRAM and nonvolatility of NAND FLASH into a future storage class memory(SCM) concept. This project will get PMRAM from TRL4 to TRL6\.