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Advances in Cost-Effective HV SiC Power Devices for Europe’s Medium Voltage Grids - AdvanSiC

适用于欧洲中压电网的经济高效高压 SiC 功率器件的进展 - AdvanSiC

基本信息

批准号：
10048924
负责人：
金额：
$ 110.51万
依托单位：
UNIVERSITY OF WARWICK
依托单位国家：
英国
项目类别：
EU-Funded
财政年份：
2023
资助国家：
英国
起止时间：
2023 至无数据
项目状态：
未结题

来源：
https://gtr.ukri.org/projects?ref=10048924
关键词：
Advances Cost Effective HV SiC

项目摘要

For a larger deployment of clean and sustainable energies more efficient and competitive converter solutions are necessary. In this framework, wide Bandgap (WBG) technology provides benefits compared to conventional silicon technology. Even those benefits are well known, e.g. efficiency and/or sufficient reduction on converter footprint, right now SiC are far too expensive and its cost has a negative impact on overall system cost. In the view of this situation, the objective of AdvanSiC is to produce, test and validate costeffective HV SiC MOSFET semiconductors in various MVDC grid applications: a solid-state circuit breaker for DC converter stations, a full-scale wind converter and a full-scale solar inverter. The aim is to minimize HV SiC device cost by advanced design structures and process optimizations. And afterwards, assure an immune and reliable environment to handle SiC fast transients, as well as optimize passives and cooling system to provide cost reduction not only at device level but also at system level. The main goal of AdvanSiC is to provide industrial leadership in key and emerging technologies to SMEs, start-ups, and industry from Europe to Europe, specifically in a technology that will be key to provide clean and affordable energy.

对于更大规模的清洁和可持续能源的部署，需要更高效和更具竞争力的转换器解决方案。在这个框架中，宽带隙(WBG)技术提供了与传统硅技术相比的优势。即使这些好处是众所周知的，例如效率和/或足够减少的转换器占地面积，目前SIC太昂贵了，其成本对整体系统成本有负面影响。鉴于这种情况，研华的目标是在各种MVDC电网应用中生产、测试和验证具有成本效益的高压碳化硅MOSFET半导体：用于直流换流站的固态断路器、全尺寸风力变流器和全尺寸太阳能逆变器。其目的是通过先进的设计结构和工艺优化来最大限度地降低高压碳化硅器件的成本。之后，确保免疫和可靠的环境，以处理碳化硅快速瞬变，以及优化无源和冷却系统，以提供不仅在设备级，而且在系统级的成本降低。AdvanSiC的主要目标是在关键和新兴技术方面为从欧洲到欧洲的中小企业、初创企业和行业提供行业领先地位，特别是在提供清洁和负担得起的能源的关键技术方面。