PHILARIS: Probing by Heavy Ions and Lasers for an Assessment of Radiation-hardness in Integrated Semiconductors

当一个高能空间辐射粒子（如宇宙射线）击中电子芯片并导致其发生故障甚至被摧毁时，就会发生单粒子效应。抗辐射装置的设计者们努力通过在大型粒子加速器中进行测试来对抗这些影响，但是没有足够的束流时间来循环，这减缓了发展速度，增加了任务的风险。使用脉冲激光器最近已被证明可以对设备产生类似的效果，该项目的目的是证明该技术在真实的空间应用中的有效性。通过将领先的辐射测试机构和激光测试系统制造商、复杂抗辐射半导体设计师和受人尊敬的回旋加速器辐照设施聚集在一起，该项目为该行业在辐射效应领域迈出重要一步提供了一个难得的机会。在抗辐射半导体的开发过程中，将激光测试作为一种可行的选择，将加快开发速度，降低风险，并使这些设施能够用于成功产品的最终验证，而不是随机测试。

Single-event effects occur when one, highly energetic space radiation particle, such as a cosmic ray, hits an electronic chip and causes it to malfunction or even be destroyed. Designers of rad hard devices strive to counter these effects by testing in large particle accelerators but there is insufficient beam time to go round and this slows down developments and increases risk for missions. Using a pulsed laser has recently been shown to deliver similar effects on a device and the aim of this project is to demonstrate the effectiveness of the technique for a real space application.By bringing together a leading radiation test house and manufacturer of laser test systems, a designer of complex rad-hard semiconductors and a respected cyclotron irradiation facility, this project provides a rare opportunity for the industry to make a significant step forward in the field of radiation effects. Establishing laser testing as a viable option during the development of rad-hard semiconductors will speed up developments, reduce risk and allow the facilities to be used for the final verification of successful products, rather than random tests.