SiC -ECM

碳化硅ECM

• 批准号: 10094645
• 金额: $ 49.63万
• 依托单位: PECM SYSTEMS LTD
• 依托单位国家: 英国
• 项目类别: Collaborative R&D
• 财政年份: 2024
• 资助国家: 英国
• 起止时间: 2024 至 无数据
• 项目状态: 未结题
• 来源: https://gtr.ukri.org/projects?ref=10094645
• 关键词: SiC; ECM

Silicon carbide (SiC) is a ceramic, typically sintered-multicrystalline. Single-crystal SiC has semi-conducting properties superior to silicon allowing smaller and thinner transistors and integrated circuits (Semi-Conductors), able to work at higher temperature and higher current/frequency. A key application is power electronics, which are important for electric cars, etc. The SiC-Semi-Conductor market is large and growing rapidly; value £1.3bn in 2023 growing to £6bn in 2030 (CAGR 23.5%).However, SiC is hard to cut leading to reject rates of up to 50% when conventional diamond machining is used.We propose applying experience of electro-chemical -machining to improve the quality of SiC cutting and increase yield leading to a significant commercial potential in global markets.

碳化硅（SiC）是一种陶瓷，通常是烧结多晶。单晶SiC具有比硅更上级的半导体特性，允许更小和更薄的晶体管和集成电路（半导体），能够在更高的温度和更高的电流/频率下工作。一个关键的应用是电力电子，这对电动汽车等很重要。SiC半导体市场很大，增长迅速; 2023年价值13亿英镑，2030年增长到60亿英镑（复合年增长率23.5%）。然而，碳化硅很难切割，采用常规金刚石加工时，废品率高达50%。切削加工，以提高SiC切削质量和产量，从而在全球市场上产生巨大的商业潜力。