SiC -ECM

碳化硅（SiC）是一种典型的烧结多晶陶瓷。单晶SiC具有优于硅的半导体特性，允许更小更薄的晶体管和集成电路（半导体），能够在更高的温度和更高的电流/频率下工作。一个关键的应用是电力电子，这对电动汽车等很重要。sic半导体市场规模庞大且增长迅速；价值从2023年的13亿英镑增长到2030年的60亿英镑（复合年增长率23.5%）。然而，碳化硅很难切割，当使用传统的金刚石加工时，废品率高达50%。我们建议应用电化学加工的经验来改善碳化硅的切割质量和提高产量，从而在全球市场上具有巨大的商业潜力。

Silicon carbide (SiC) is a ceramic, typically sintered-multicrystalline. Single-crystal SiC has semi-conducting properties superior to silicon allowing smaller and thinner transistors and integrated circuits (Semi-Conductors), able to work at higher temperature and higher current/frequency. A key application is power electronics, which are important for electric cars, etc. The SiC-Semi-Conductor market is large and growing rapidly; value £1.3bn in 2023 growing to £6bn in 2030 (CAGR 23.5%).However, SiC is hard to cut leading to reject rates of up to 50% when conventional diamond machining is used.We propose applying experience of electro-chemical -machining to improve the quality of SiC cutting and increase yield leading to a significant commercial potential in global markets.