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SiC -ECM

SiC -ECM
碳化硅ECM
批准号:
10094645
负责人:
金额:
$49.63万
依托单位:
依托单位国家:
英国
项目类别:
Collaborative R&D
财政年份:
2024
资助国家:
英国
项目状态:
未结题
起止时间:
2024 至 --
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中文摘要
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英文摘要
Silicon carbide (SiC) is a ceramic, typically sintered-multicrystalline. Single-crystal SiC has semi-conducting properties superior to silicon allowing smaller and thinner transistors and integrated circuits (Semi-Conductors), able to work at higher temperature and higher current/frequency. A key application is power electronics, which are important for electric cars, etc. The SiC-Semi-Conductor market is large and growing rapidly; value £1.3bn in 2023 growing to £6bn in 2030 (CAGR 23.5%).However, SiC is hard to cut leading to reject rates of up to 50% when conventional diamond machining is used.We propose applying experience of electro-chemical -machining to improve the quality of SiC cutting and increase yield leading to a significant commercial potential in global markets.
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