Tantalum carbide coatings for high temperature barrier layers in the semiconductor industry

用于半导体行业高温阻挡层的碳化钽涂层

• 批准号: 130842
• 金额: $ 3.14万
• 依托单位: ARCHER TECHNICOAT LIMITED
• 依托单位国家: 英国
• 项目类别: Feasibility Studies
• 财政年份: 2012
• 资助国家: 英国
• 起止时间: 2012 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=130842
• 关键词: Tantalum; carbide; coatings; temperature; barrier

The advent of high power blue & UV LEDs has enabled full colour LED TV displays and white LED automotive and domestic lighting. These are based on Gallium Nitride which is deposited by the MOCVD process on substrate wafers supported on CVD SiC coated graphite furniture. During processing the SiC coating is attacked by the ammonia gas employed in the process, reducing lifetime. A new more inert coating is required to enhance coating lifetime and reduce overall cost. Tantalum carbide is seen by the industry as a replacement which can greatly enhance resistance to this aggressive atmosphere and provide a solution which is not yet available. ATL aims to develop the TaC CVD coating which will enable penetration into the large and growing market for GaN based LEDs and power semiconductors. ATL’s aim is to sell CVD TaC coated graphite parts and industrial scale coating equipment to suppliers of the semiconductor industry.

高功率蓝光和紫外光LED的出现使全彩色LED电视显示屏和白光LED汽车和家用照明成为可能。它们是基于氮化镓，它是通过MOCVD工艺沉积在以CVD碳化硅涂层石墨家具为支撑的基片上的。在加工过程中，碳化硅涂层会受到工艺中使用的氨气的侵蚀，从而降低了寿命。为了提高涂层寿命和降低总体成本，需要一种新的更惰性的涂层。碳化钽被业界视为一种替代品，它可以极大地增强对这种侵略性气氛的抵抗力，并提供一种目前尚不存在的解决方案。ATL的目标是开发TAC CVD涂层，使其能够渗透到基于GaN的LED和功率半导体的巨大且不断增长的市场。ATL的目标是向半导体行业的供应商销售CVD TAC涂层石墨部件和工业规模的涂层设备。