To demonstrate the feasibility of producing low cost, high intensity LEDs using Anvil’s stress relief IP to grow high quality GaN on 3C-SiC on large diameter Si substrates.
To demonstrate the feasibility of producing low cost, high intensity LEDs using Anvil’s stress relief IP to grow high quality GaN on 3C-SiC on large diameter Si substrates.
演示使用 Anvil 的应力消除 IP 在大直径 Si 基板上生长高质量 3C-SiC 上的 GaN 来生产低成本、高强度 LED 的可行性。
批准号：
131706
负责人：
金额：
$3.14万
依托单位国家：
英国
项目类别：
Feasibility Studies
财政年份：
2014
资助国家：
英国
项目状态：
已结题
起止时间：
2014 至 --
中文摘要
翻译
点击翻译按钮获取中文摘要
英文摘要
Anvil Semiconductors has developed technology that enables the growth of device quality 3C-SiC wafers on large diameter Si substrates for use in power devices, delivering the performance and efficiency benefits of SiC at the price of silicon. The IP resolves the problem of the stress which is inevitable when growing SiC on Si. This feasibility study determines whether the IP has applicability to LEDs with 3C-SiC providing an effective buffer layer for GaN growth on large diameter Si wafers. The stress relief technology may also enable the growth of GaN with reduced dislocation density, leading to low cost, high intensity LEDs. Such a cost/performance improvement would have a disruptive effect on the LED market making replacement of incandescent lights and compact fluorescents with solid state lighting commercially viable, potentially reducing the world energy consumption by some 11%.
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
海外基金
