CDS--TE-SILICON SCINTILLATION DETECTORS

用于探测X射线和伽马射线的发光材料是一个关键的 用于许多医学成像系统。然而，目前的闪烁体- 半导体X射线探测器的闪烁体光匹配较差 （约400 nm）和光电二极管响应（λ/最大值约 1,000 nm），这限制了它们的性能。 探测器将使用一种新的闪烁体，碲掺杂 硫化镉，实现大（约500立方厘米），高质量 通过改进的气相生长（mVPG）技术获得单晶梨晶。 CdS：Te是一种坚固（4 Mho）、致密（4.8 g/cm 3）的材料， （约为NaI：TI的70%），中速（小于300 ns），红色 (730 nm）发光与硅光电二极管（SiPD）很好地匹配 灵敏度 提出了五个方面的任务：（1）发展MVPG技术， 高质量的CdS：Te单晶：（2）合成和升华CdS， CdTe组分材料;（3）制备不同的MVPG单CdS：Te晶体 生长条件和Te含量;（4）测量CdS：Te发光， 光学和结构特性与生长条件;和（5） 用于医疗的CdS：TeSiPD X射线探测器原型的构建和评估 应用. 在第二阶段，CdS：Te MVPG技术将得到优化，以生产高性能的 高质量、坚固、紧凑、低功耗光子探测器。 拟定商业应用： 潜在的商业应用不可用。

Luminescent materials for detecting X-rays and gamma-rays are a critical component for many medical imaging systems. However, present scintillator- semiconductor X-ray detectors have a poor match of scintillator light (approximately 400 nm) and photodiode response (lambda/max approximately 1,000 nm) which limits their performance. Detectors will be developed using a new scintillator, tellurium doped cadmium sulfide, realized in large (approximately 500 cm3), high quality single crystal boules by modified Vapor Phase Growth (mVPG) technology. CdS:Te is a rugged (4 Mho), dense (4.8 g/cm3) material whose bright (approximately 70% of NaI:TI), moderately fast (less than 300 ns), red (730 nm) luminescence is well matched to Silicon PhotoDiode (SiPD) sensitivity. Five tasks are proposed: (1) Develop the MVPG technology to produce large, high quality single CdS:Te crystals; (2) Synthesize and sublimate CdS and CdTe component material; (3) Produce MVPG single CdS:Te crystals varying growth conditions and Te content; (4) Measure the CdS:Te luminescent, optical, and structural properties with growth condition; and (5) Construct and evaluate prototype CdS:TeSiPD X-ray detectors for medical applications. In Phase II the CdS:Te MVPG technology will be optimized to produce high- quality, rugged, compact, low-power photon detectors. PROPOSED COMMERCIAL APPLICATION: Potential commercial application not available.