M-PowerD - Manufacturing PSJ GaN Power Devices in the UK

M-PowerD - 在英国制造 PSJ GaN 功率器件

• 批准号: 76003
• 金额: $ 48.4万
• 依托单位: INEX MICROTECHNOLOGY LIMITED
• 依托单位国家: 英国
• 项目类别: Collaborative R&D
• 财政年份: 2020
• 资助国家: 英国
• 起止时间: 2020 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=76003
• 关键词: PowerD; Manufacturing; PSJ; GaN; Power

**M-PowerD --** **M**anufacturing PSJ GaN **Power D**evices in the UKThis is a project to build capability in the UK's only commercial GaN fab, INEX Microtechnology Ltd, to manufacture the world's first, low cost, high voltage GaN power transistors. Our project aims to develop a polarisation super-junction high electron mobility transistor (PSJ HEMT) and process wholly in the UK. We will use this project to build a low cost bi-directional 3kV GaN PSJ HEMT.Gallium Nitride (GaN) is a semiconductor like silicon, but it can be used to make higher performance power transistors than silicon. Silicon carbide is another high-performance semiconductor, but GaN has greater potential for cost reduction.PSJ technology is a patented break-through concept for GaN developed in the University of Sheffield with Powdec of Japan. This concept enables ultra-high-performance power devices that have been proven to achieve more than 3x higher voltage than existing GaN technologies.We will use the PSJ technology to make bi-directional transistors. Bi-directional transistors can switch AC more efficiently and at lower cost than the conventional approach using two transistors back-to-back. Bi-directional transistors are not available commercially at present, so our project will be a key enabler for new power electronics, machines and drives (PEMD) applications. Our initial target application will be for a smart power grid to replace the UK's ageing infrastructure.There are three partners in the consortium:The **University of Sheffield (UoS)** who will design the device, and wafer and will work with INEX to develop the process and publish the results.**INEX** **Microtechnology Limited** who will develop their power GaN processing capabilities to manufacture test structures and complete wafers of these PSJ GaN HEMTs. This capability will place INEX as world class manufacturing facility for power GaN.The **Compound Semiconductor Applications Catapult (CSAC)** who will define target applications for these devices, test the completed parts and publish the results.

**M-PowerD --*M** 在英国制造PSJ GaN **Power D** 器件这是一个在英国唯一的商业GaN晶圆厂INEX Microtechnology Ltd建立能力的项目，以制造世界上第一个低成本高压GaN功率晶体管。我们的项目旨在开发一种极化超结高电子迁移率晶体管（PSJ HEMT），并完全在英国进行工艺。我们将利用这个项目来构建一个低成本的双向3 kV GaN PSJ HEMT。氮化镓（GaN）是一种类似硅的半导体，但它可以用来制造比硅更高性能的功率晶体管。碳化硅是另一种高性能半导体，但GaN具有更大的成本降低潜力。PSJ技术是谢菲尔德大学与日本Powdec合作开发的GaN专利突破概念。这一概念使超高性能功率器件能够实现比现有GaN技术高3倍以上的电压。我们将使用PSJ技术制造双向晶体管。与使用两个晶体管背靠背的传统方法相比，双向晶体管可以更有效地并且以更低的成本切换AC。双向晶体管目前还没有商业化，因此我们的项目将成为新的电力电子，机器和驱动器（PEMD）应用的关键推动者。我们最初的目标应用将是智能电网，以取代英国老化的基础设施。该联盟有三个合作伙伴：谢菲尔德大学（UoS）** 将设计设备，以及晶圆，并将与INEX合作开发工艺并公布结果。INEX*Microtechnology Limited** 将开发其功率GaN处理能力，以制造这些PSJ GaN HEMT的测试结构和完整晶圆。这种能力将使INEX成为世界级的功率GaN制造工厂。** 化合物半导体应用弹射器（CSAC）** 将为这些器件定义目标应用，测试完成的部件并发布结果。