Learning and computation in disordered networks of memristors: theory and experiments
Learning and computation in disordered networks of memristors: theory and experiments
批准号:
EP/H014381/1
负责人:
Andrew Adamatzky
金额:
$82.04万
依托单位国家:
英国
项目类别:
Research Grant
财政年份:
2010
资助国家:
英国
项目状态:
已结题
起止时间:
2010 至 --
中文摘要
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英文摘要
Memristor (memory resistor) is a device whose resistance changes depending on the polarity and magnitude of a voltage applied to the device's terminals and the duration of this voltage's application. The memristor is a non-volatile memory because the specific resistance is retained until the application of another voltage. A memristor implements a material version of Boolean logic and thus any logical circuit can be constructed from memristors. We propose to fabricate in laboratory experiments an adaptive, self-organized disordered network of memristors. This practical fabrication will be backed up by rigorous computer simulation experiments. The memristor network is comprised of a conglomerate of conductive polymer fibres interspersed with particles of solid electrolyte. The conglomerate is placed on a matrix of micro-electrodes capable of recording voltage and generating current sources and sinks. Machine learning techniques will be applied in order to design logical schemes and basic arithmetical circuits.
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DOI:
10.1142/s0218127412300364
发表时间:
2011-11
期刊:
ArXiv
影响因子:
--
作者:
[A. Adamatzky;L. Chua]
通讯作者:
A. Adamatzky;L. Chua
Different Behaviour Seen in Flexible Titanium Dioxide Sol-Gel Memristors Dependent on the choice of electrode material.
柔性二氧化钛溶胶-凝胶忆阻器中出现的不同行为取决于电极材料的选择。
DOI:
--
发表时间:
期刊:
Technical Digest of Frontiers in Electronic Materials, pages 577-578 (Nature Materials Conference) Aachen
影响因子:
--
作者:
[Ella Gale (Author)]
通讯作者:
Ella Gale (Author)
Aluminium electrodes effect the operation of titanium oxide sol-gel memristors
铝电极影响二氧化钛溶胶-凝胶忆阻器的工作
DOI:
--
发表时间:
期刊:
arxiv
影响因子:
--
作者:
[Ella Gale (Author)]
通讯作者:
Ella Gale (Author)
DOI:
--
发表时间:
期刊:
arxiv
影响因子:
--
作者:
[Ella Gale (Author)]
通讯作者:
Ella Gale (Author)
DOI:
10.1098/rspa.2012.0161
发表时间:
2012-11-08
期刊:
PROCEEDINGS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES
影响因子:
3.5
作者:
[Alonso-Sanz, Ramon]
通讯作者:
Alonso-Sanz, Ramon
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