Heterogeneous integration for highly functional silicon photonic circuits

高功能硅光子电路的异质集成

• 批准号: 1804226
• 金额: --
• 依托单位: University of Glasgow
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2016
• 资助国家: 英国
• 起止时间: 2016 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-1804226
• 关键词: Heterogeneous; integration; highly; functional; silicon

Silicon photonics has emerged as the most promising material platform for future photonic integrated systems. Thanks to its CMOS compatibility, it will enable the development of chips over very large volumes and with unprecedented level of complexity and functionality. However, the indirect bandgap and the cubic symmetry of the silicon crystal lead to very poor light emission, lack of Pockels effect and inefficient non-linear processes at telecom wavelengths.This project will address these limitations through the development of heterogeneous technologies that will integrate III-V semiconductors, garnets and complex oxides on silicon photonic chips. Final demonstrators will include devices with integrated lasers and detectors, very low-energy optical modulators, more efficient optical non linearities and on-chip polarisation manipulation capabilities.This research project is to be carried out in the Optoelectronics research group under the supervision of Prof. Marc Sorel who has been engaged in research concerning photonic integration and silicon photonics for over 15 years.

硅光子学已成为未来光子集成系统最有前途的材料平台。由于其 CMOS 兼容性，它将能够开发大量、具有前所未有的复杂性和功能性的芯片。然而，硅晶体的间接带隙和立方对称性导致光发射非常差，缺乏普克尔斯效应，并且在电信波长下非线性过程效率低下。该项目将通过开发异质技术来解决这些限制，这些技术将在硅光子芯片上集成 III-V 半导体、石榴石和复杂氧化物。最终的演示器将包括具有集成激光器和探测器、极低能量光调制器、更高效的光学非线性和片上偏振操纵能力的器件。该研究项目将在光电子研究组中在 Marc Sorel 教授的指导下进行，Marc Sorel 教授从事光子集成和硅光子学研究超过 15 年。

项目成果

Trimming of silicon-on-insuiator micro-ring resonators by laser irradiation

通过激光照射修整绝缘体上硅微环谐振器

• DOI: 10.1109/cleoe-eqec.2017.8087126
• 发表时间: 2017
• 作者: Sharp G

Trimming of silicon-on-insulator devices via localised laser annealing (Conference Presentation)

通过局部激光退火对绝缘体上硅器件进行修整（会议演示）

• DOI: 10.1117/12.2507212
• 发表时间: 2019
• 作者: Biryukova V