Atomic point defects in two-dimensional materials

点击翻译按钮获取中文摘要

Brief description of the context of the research including potential impact;In this project we will explore the electronic and magnetic properties of novel two-dimensional materials at the atomic scale. The principal tool for this work will be low temperature scanning tunnelling microscopy and spectroscopy (STM/STS). Two dimensional (2D) materials, such as graphene and the transition metal dichalcogenides (TMDs) are of great current interest for their potental role in future electronic devices. Here we will focus primarilly on the properties of novel atomic point defects in 2D materials, as well as methods by which to create and couple them in ways that can be exploited for the creation of nanoelectronic devices. Aims and objectivesThe primary aim will be the growth and characterisation of 2D materials and the in-situ creation of novel atomic point defects via deposition, sputtering, and/or direct atomic manipulation. We aim to explore the fundamentals of doping, Fermi level pinning, and the role of defects in the emergence of phenomena such as CDW states, as well as the intrinsic properties of point defects and nanostructures of point defects for potential application in nanoelectronic devices. Materials of interest are intercalated transitional metal dichalcogenides, novel 2D materials such as phosphorene and germanene, and graphene.Novelty of the research methodologyThe novelty of our approach lies in the ability to create the atomic point defects in-situ and to explore their properties at the atomic-scale using low temperature STM/STS.Alignment to EPSRC's strategies and research areasThere is strong overlap with the EPSRCs research areas Condensed Matter Electronic Structure, Condensed Matter Magnetism and Magnetic Materials, Graphene and Carbon Nanotechnology, Quantum Devices Components and Systems.Any companies or collaborators involvedZyvex Labs., Dallas, Texas, USA, have been involved with preliminary discussions regarding the creation of point defects on TMD materials using STM atomic manipulation.