Design, simulation and fabrication of silicon carbide IGBTs - 1=Information and communication technologies (ICT) 2=Non CMOS Device Technology

碳化硅 IGBT 的设计、仿真和制造 - 1=信息和通信技术 (ICT) 2=非 CMOS 器件技术

• 批准号: 1923802
• 金额: --
• 依托单位: University of Warwick
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2017
• 资助国家: 英国
• 起止时间: 2017 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-1923802
• 关键词: Design; simulation; fabrication; silicon; carbide

Silicon carbide (SiC) N-channel IGBTs have the potential to enable new and highly efficient ultrahigh voltage (10 kV+) applications such as the Smart Grid and HVDC, enabling a low carbon society. However, to date, only four research groups have reported on their successful development, due to the considerable challenge associated with their fabrication. The power group at Warwick along with partners from Newcastle and Cambridge, are now taking on the challenge to be one of the first groups in Europe to develop these transformative devices. Once established, we have the ability to push the boundaries of what has been achieved in this fledgling field to date. Guy's project will be involved in the full development of these devices. Working with the in-house materials development team, he will characterise and benchmark the thick epitaxy produced. He will learn to use the cleanroom by implementing the established in-house MOSFET and PiN diode recipes on the wafers coming from the SiC epitaxial reactor. He will then modify these so they are appropriate for implementation on novel IGBT substrates, using FEM simulation to design and layout new masksets. Like any PhD, it is expected that while Guy will be involved with the full research and development process, he will be free to follow the more interesting results a that arise on the way, be that a novel design, processing step, a design split, or the physics behind the device characteristics.

碳化硅（SiC）N沟道IGBT具有实现新型高效中压（10 kV+）应用的潜力，例如智能电网和HVDC，从而实现低碳社会。然而，到目前为止，只有四个研究小组报告了他们的成功开发，由于与他们的制造相关的相当大的挑战。沃里克的电力集团沿着来自纽卡斯尔和剑桥的合作伙伴，现在正在接受挑战，成为欧洲第一批开发这些变革性设备的集团之一。一旦建立，我们有能力推动迄今为止在这个新兴领域取得的成就。盖伊的项目将参与这些设备的全面开发。与内部材料开发团队合作，他将对生产的厚外延进行测试和基准测试。他将通过在来自SiC外延反应器的晶圆上实施既定的内部MOSFET和PiN二极管配方来学习使用洁净室。然后，他将修改这些，使它们适合在新型IGBT衬底上实现，使用FEM模拟来设计和布局新的掩模组。像任何博士一样，预计Guy将参与整个研究和开发过程，他将可以自由地跟踪过程中出现的更有趣的结果，无论是新颖的设计，处理步骤，设计分裂还是设备特性背后的物理学。