Nanoparticle/Metal-Organic Inks for CdZnTe

描述(由申请人提供)：这个SBIR第一阶段项目解决了用于平板X射线图像探测器的低温、大面积沉积路线对用于平板x射线图像探测器的CdZnTe电子材料的需求。根据研究计划，将配制一种新的墨水组合物，以允许在低于300°C的温度下生长CdZnTe材料。该过程将使用一种混合墨水，该墨水包含纳米级的CdZnTe颗粒，并在非水溶剂中混合活性分散剂。这种反应性分散剂是一种金属-有机分子，在常温下将强烈配位到纳米CdZnTe形成悬浮液。在喷射沉积过程中，这种反应性分散剂会在相对较低的温度下热转化为CdZnTe和副产物。如果能够根据低温(即300℃)工艺以这种方式沉积高质量的CdZnTe材料，则该方法直接适用于非晶硅(a-Si)薄膜晶体管(TFT)阵列。将CdZnTe光电导体与a-SiTFT相耦合，将形成平板X射线图像探测器。这种探测器可以实现实时交互X射线成像。

DESCRIPTION (provided by applicant): This SBIR Phase I project addresses the need for low-temperature, large-area deposition routes to CdZnTe electronic materials for use in flat panel x-ray image detectors. According to the research plan, a novel ink composition will be formulated to allow growth of CdZnTe materials at temperatures less than 300 ¿C.The process will utilize a hybrid ink containing CdZnTe nanoparticles mixed with a reactive dispersant in a non-aqueous solvent. The reactive dispersant, a metal-organic molecule, will strongly coordinate to CdZnTe nanoparticles to form a suspension at ambient temperatures. During spray deposition, this reactive dispersant will thermally transform into CdZnTe and byproducts at relatively low-temperature. If high-quality CdZnTe materials can be deposited in such a fashion according to a low-temperature (i.e., <300 ¿C) process, the approach is directly amenable to application on amorphous silicon (a-Si) thin film transistor (TFT) arrays. Coupling a CdZnTe photoconductor with an a-Si TFT would result in the formation of a flat panel x-ray image detector. Such detectors could enable real-time interactive x-ray imaging.