Quantum Computing with Superconducting Gatemon Qubits

使用超导 Gatemon 量子位的量子计算

• 批准号: 2128325
• 金额: --
• 依托单位: Imperial College London
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2018
• 资助国家: 英国
• 起止时间: 2018 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-2128325
• 关键词: Quantum; Computing; Superconducting; Gatemon; Qubits

Superconducting transmon qubits are an attractive platform for building a prototype quantum computer comprising ~100 qubits. In order to go beyond this and build quantum computers powerful enough to break secure encryption or simulate small molecules, it will be necessary to improve coherence and scalability. Gatemon qubits based on III-V semiconductors are a recently innovated voltage-controlled transmon that offers advantages with scaling, but their performance is currently limited by microwave losses. In order to improve performance we will study loss mechanisms in III-V structures comprising Al/Nb/InP by measuring the power, temperature and time-dependence of quality factors. Initial measurements will be performed at the National Physical Laboratory. We will also explore voltage-controlled semiconductors that can be grown on low-loss Si substrates, for instance, graphene or V-VI topological insulators. The strong spin-orbit interaction in the latter also makes it possible realise Majorana physics and and one aim is to test for topologically-protected relaxation times in a Majorana transmon-MRC.

超导量子盘是一个有吸引力的平台，用于构建包含〜100 QUAT的原型量子计算机。为了超越它并构建足够强大的量子计算机以破坏安全的加密或模拟小分子，这是提高连贯性和可扩展性的必要条件。基于III-V半导体的Gatemon Qubits是最近创新的电压控制的Transmon，具有缩放的优势，但目前其性能受到微波损失的限制。为了提高性能，我们将通过测量质量因素的功率，温度和时间依赖性来研究包括Al/nb/inp的III-V结构中的损失机制。最初的测量将在国家物理实验室进行。我们还将探索可以在低损坏的Si底物（例如石墨烯或V-VI拓扑绝缘子）上生长的电压控制的半导体。后者中强的自旋轨道相互作用也使实现主要物理学，并且一个目的是在Majorana Transmon-MRC中测试拓扑保护的放松时间。