Deterministic nanoscale transfer printing of compound semiconductor nanowires for large scale device integration.

基于化合物半导体纳米线的器件在光电子学中具有显著的潜力，允许光源和检测器的小型化以及暴露表面的功能化。应用范围从光子集成电路，如嵌入到芯片波导中的激光器和光电探测器，到气体和生物传感器。这样的器件在纳米线的定位的制造方面面临重大挑战，需要单独纳米线的缓慢串行处理或在选择性区域生长中的重大生长挑战。该项目旨在解决这些困难，并使大规模并行集成的纳米线在大规模和商业上可行的规模。确定性转移印刷技术将被开发，以允许在单个到晶片规模的并行过程中将化合物半导体纳米线精确定位和定向到异质衬底上。这些转移印刷技术将允许使用低成本、高密度的自组装纳米线晶片作为供体衬底，并且允许控制纳米线在任何可重构配置中的定位。实现纳米线有序化和精确定位的转移印刷的关键是纳米结构转移印刷印章和转移印刷过程中的搅拌技术的发展。将采用各种加工技术，包括直写激光光刻图案转移印刷邮票模具。开发的技术将用于打印GaN和其他材料的纳米线和纳米棒的自顶向下制造和MBE生长。

Compound semiconductor nanowire based devices have significant potential in optoelectronics allowing for miniaturization of optical sources and detectors and functionalization of exposed surfaces. Applications range from photonic integrated circuits as lasers and photodetectors embedded into waveguides on chip to gas and biological sensors. Such devices face significant challenges in terms of fabrication with the positioning of nanowires either requiring slow serial processing of individual nanowires or significant growth challenges in selective area growth. This project seeks to address these difficulties and enable large scale parallel integration of nanowires at large and commercially viable scales. Deterministic transfer printing techniques will be developed to allow the precise positioning and orientation of compound semiconductor nanowires onto foreign substrates in an individual to wafer scale parallel process. These transfer printing techniques will allow the use of low cost, high-density self-assembled nanowire wafers as donor substrates and control of positioning of nanowires in any reconfigurable configuration. Key to achieving transfer printing of nanowire ordering and precision positioning is the development of nanostructured transfer printing stamps and agitation techniques during the transfer printing process. A wide range of processing techniques will be employed including direct write laser lithography to pattern transfer printing stamp moulds. The techniques developed will be used to print GaN and other material nanowires and nanorods by both top down fabrication and MBE growth.