Deterministic nanoscale transfer printing of compound semiconductor nanowires for large scale device integration.

用于大规模器件集成的化合物半导体纳米线的确定性纳米级转移印刷。

• 批准号: 2268051
• 金额: --
• 依托单位: University of Sheffield
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2019
• 资助国家: 英国
• 起止时间: 2019 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-2268051
• 关键词: Deterministic; nanoscale; transfer; printing; compound

Compound semiconductor nanowire based devices have significant potential in optoelectronics allowing for miniaturization of optical sources and detectors and functionalization of exposed surfaces. Applications range from photonic integrated circuits as lasers and photodetectors embedded into waveguides on chip to gas and biological sensors. Such devices face significant challenges in terms of fabrication with the positioning of nanowires either requiring slow serial processing of individual nanowires or significant growth challenges in selective area growth. This project seeks to address these difficulties and enable large scale parallel integration of nanowires at large and commercially viable scales. Deterministic transfer printing techniques will be developed to allow the precise positioning and orientation of compound semiconductor nanowires onto foreign substrates in an individual to wafer scale parallel process. These transfer printing techniques will allow the use of low cost, high-density self-assembled nanowire wafers as donor substrates and control of positioning of nanowires in any reconfigurable configuration. Key to achieving transfer printing of nanowire ordering and precision positioning is the development of nanostructured transfer printing stamps and agitation techniques during the transfer printing process. A wide range of processing techniques will be employed including direct write laser lithography to pattern transfer printing stamp moulds. The techniques developed will be used to print GaN and other material nanowires and nanorods by both top down fabrication and MBE growth.

基于复合半导体纳米线的器件在光电子学中具有重要的潜力，可以实现光源和探测器的小型化以及暴露表面的功能化。应用范围从光子集成电路激光器和光电探测器嵌入到芯片上的波导到气体和生物传感器。这种器件在纳米线的制造定位方面面临着重大挑战，要么需要对单个纳米线进行缓慢的串行处理，要么在选择性区域生长方面面临重大的生长挑战。该项目旨在解决这些困难，并使纳米线在大规模和商业上可行的规模上实现大规模并行集成。确定性转移印刷技术将被开发，以允许在单个到晶圆规模的平行过程中，将化合物半导体纳米线精确定位和定向到外国衬底上。这些转移印刷技术将允许使用低成本、高密度的自组装纳米线晶圆作为供体基片，并在任何可重构配置中控制纳米线的定位。实现纳米线有序和精确定位转移印花的关键是开发纳米结构转移印花印花和转移印花过程中的搅拌技术。广泛的加工技术将被采用，包括直接写入激光光刻到图案转移印刷邮票模具。所开发的技术将用于通过自上而下的制造和MBE生长来打印GaN和其他材料的纳米线和纳米棒。