Deterministic nanoscale transfer printing of compound semiconductor nanowires for large scale device integration.

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Compound semiconductor nanowire based devices have significant potential in optoelectronics allowing for miniaturization of optical sources and detectors and functionalization of exposed surfaces. Applications range from photonic integrated circuits as lasers and photodetectors embedded into waveguides on chip to gas and biological sensors. Such devices face significant challenges in terms of fabrication with the positioning of nanowires either requiring slow serial processing of individual nanowires or significant growth challenges in selective area growth. This project seeks to address these difficulties and enable large scale parallel integration of nanowires at large and commercially viable scales. Deterministic transfer printing techniques will be developed to allow the precise positioning and orientation of compound semiconductor nanowires onto foreign substrates in an individual to wafer scale parallel process. These transfer printing techniques will allow the use of low cost, high-density self-assembled nanowire wafers as donor substrates and control of positioning of nanowires in any reconfigurable configuration. Key to achieving transfer printing of nanowire ordering and precision positioning is the development of nanostructured transfer printing stamps and agitation techniques during the transfer printing process. A wide range of processing techniques will be employed including direct write laser lithography to pattern transfer printing stamp moulds. The techniques developed will be used to print GaN and other material nanowires and nanorods by both top down fabrication and MBE growth.