Scanning-tunnelling microscopy and spectroscopy of single-layer transition-metal dichalcogenides

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Quantum materials offer a wide range of technologically interesting and relevant properties, few of which have so far been realized and explored for device operation. One reason for this is that their properties are typically studied on single crystals, whereas practically all current device technology builds on thin films and heterostructures. Growth of quantum materials in thin film form using molecular beam epitaxy provides a path to realize their opportunities for device applications, but require the growth protocols and the properties of their thin film version to be studied and understood first. Within this project, thin films of quantum materials will be investigated at the atomic scale by low temperature scanning tunnelling microscopyKey objective of this project are: The setup of a low temperature scanning tunnelling microscope optimized for the study of monolayer and thin film samples to study the properties of monolayer transition metal dichalcogenides (TMDCs) and films of transition metal oxides. Growth of thin film samples of quantum materials using molecular beam epitaxy To investigate the interplay between reduced dimensionality, spin-orbit coupling, charge density wave orders and superconductivity in thin film samples of quantum materials.Specialist training will be provided via the introductory courses of the Centre for Doctoral Training in Quantum Materials, graduate taught courses of the University of St Andrews, and through transferrable skills training offered by the Centre for Academic, Professional and Organisational Development, training organised via the CDTs and via external providers.