Development of GaAsBiN alloys for next generation photodiodes and solar cells.

开发用于下一代光电二极管和太阳能电池的 GaAsBiN 合金。

• 批准号: 2565312
• 金额: --
• 依托单位: University of Sheffield
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2020
• 资助国家: 英国
• 起止时间: 2020 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-2565312
• 关键词: Development; GaAsBiN; alloys; next; generation

Bismuth (Bi) and Nitrogen (N) are Group V elements that can be added in small quantities to conventional III-V semiconductors like GaAs, to vary the valence/conduction band structure with a relatively small change to the lattice parameter. This makes it potentially useful for a range of opto-electronic devices such as photodetectors, light emitting diodes and solar cells. The student will be closely involved in the growth of epitaxial layers of GaAsBiN and the characterisation of their optical, electrical and structural properties. Suitable test structures will be grown and the student will look at the photoluminescence and leakage current properties of this material, initially at room temperature but then down at 77 Kelvin. A major objective will be to minimise the occurrence by defects and traps during the growth of these epitaxial layers.

铋（Bi）和氮（N）是V族元素，可以少量添加到常规的III-V族半导体如GaAs中，以改变价带/导带结构，而晶格参数的变化相对较小。这使得它可能用于一系列光电器件，如光电探测器，发光二极管和太阳能电池。学生将密切参与GaAsBiN外延层的生长及其光学，电学和结构特性的表征。合适的测试结构将被生长，学生将研究这种材料的光致发光和漏电流特性，最初在室温下，但随后在77开尔文下。一个主要的目标将是在这些外延层的生长过程中最小化缺陷和陷阱的发生。