Characterising the composition, defect concentrations and optical properties of semiconductor alloys based on gallium oxide (Ga2O3)

表征基于氧化镓 (Ga2O3) 的半导体合金的成分、缺陷浓度和光学性能

• 批准号: 2598328
• 金额: --
• 依托单位: University of Strathclyde
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2021
• 资助国家: 英国
• 起止时间: 2021 至 无数据
• 项目状态: 未结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-2598328
• 关键词: Characterising; composition; defect; concentrations; optical

Beta-phase gallium oxide (beta-Ga2O3) is attracting significant interest for use in electronic and photonic devices, particularly for applications in power electronics where its ultra-wide bandgap (approaching 5 eV) is advantageous. As well as the large bandgap, its high transmission of visible light (~ 90%) makes Ga2O3 a leading contender for UV optoelectronics applications such as solar-blind photodetectors and scintillators. The chance to alloy Ga2O3 with elements such as tin (Sn), indium (In) or aluminium (Al) adds to the potential, bringing in possibilities to tune the bandgap and enhance performance. For example, photodetectors made from tin gallium oxide (TGO) have been shown to outperform Ga2O3 devices by more than one order of magnitude in device response to UV light.The project will characterise Ga2O3 and related alloys using a combination of advanced materials analysis techniques. An electron microprobe will be used to measure composition, using wavelength dispersive X-ray analysis, and optical emission, using cathodoluminescence, with high spatial resolution (down to approximately 100 nm). For more insulating samples an environmental scanning electron microscope will be used to measure the CL alongside energy dispersive X-ray analysis. Correlating the spatially resolved optical data with the compositional information from the same area will provide an understanding of the properties of the various Ga2O3 alloy systems as well as information on the impact of defects on the material performance. Measuring samples before and after annealing in various atmospheres will be used to identify which defects are present and how their concentrations can be controlled.

β相氧化镓（β-Ga2O3）在电子和光子器件中的应用引起了人们的极大兴趣，特别是在电力电子应用中，其超宽带隙（接近5 eV）具有优势。除了大带隙之外，Ga2O3 对可见光的高透射率 (~ 90%) 使 Ga2O3 成为紫外光电应用（例如日盲光电探测器和闪烁体）的领先竞争者。将 Ga2O3 与锡 (Sn)、铟 (In) 或铝 (Al) 等元素制成合金的机会增加了潜力，为调整带隙和增强性能提供了可能性。例如，由锡镓氧化物 (TGO) 制成的光电探测器已被证明在对紫外光的响应方面比 Ga2O3 器件高出一个数量级以上。该项目将结合先进的材料分析技术来表征 Ga2O3 和相关合金。电子微探针将用于测量成分，使用波长色散 X 射线分析，以及使用阴极发光的光学发射，具有高空间分辨率（低至约 100 nm）。对于更绝缘的样品，将使用环境扫描电子显微镜来测量化学发光以及能量色散 X 射线分析。将空间分辨光学数据与同一区域的成分信息相关联，将有助于了解各种 Ga2O3 合金系统的特性以及缺陷对材料性能影响的信息。在各种气氛中退火前后测量样品将用于识别存在哪些缺陷以及如何控制它们的浓度。