'Investigating the impact of Bismuth on the band gap engineering and morphological properties of III/V semiconductor materials grown using MBE'.

“研究铋对使用 MBE 生长的 III/V 半导体材料的带隙工程和形态特性的影响”。

• 批准号: 2602258
• 金额: --
• 依托单位: University of Sheffield
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2021
• 资助国家: 英国
• 起止时间: 2021 至 无数据
• 项目状态: 未结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-2602258
• 关键词: Investigating; impact; Bismuth; band; gap

This project aims to investigate the impact of Bismuth incorporation in the quaternary III/V semiconductor materials of InGaAsBi and InAlAsBi grown via MBE on a InP substrate. Materials grown will be analyzed using photo-luminescent spectroscopy, XRD, Nomarski microscopy and externally contracted techniques such as SIMS and TEM. The effects of bismuth content and various growth parameters on the materials band gap, optical activity and morphological quality will be determined. The growth of these materials has only recently been reported and further development of these materials will lead to implementation in future Avalanche Photodiode (APD) devices.

该项目旨在研究Ingaasbi和通过MBE在INP基板上生长的Ingaasbi和Inalasbi的第四纪III/V半导体材料中的需要次的影响。将使用光发光光谱，XRD，Nomarski显微镜和外部收缩技术（例如SIMS和TEM）分析生长的材料。将确定需要匹犬含量和各种生长参数对材料带隙，光学活性和形态质量的影响。这些材料的生长直到最近才报告，这些材料的进一步开发将导致未来的雪崩光电二极管（APD）设备实施。