'Investigating the impact of Bismuth on the band gap engineering and morphological properties of III/V semiconductor materials grown using MBE'.

该项目旨在研究铋掺入在InP衬底上通过MBE生长的InGaAsBi和InAlAsBi的季系III/V半导体材料中的影响。生长的材料将使用光致发光光谱、XRD、Nomarski显微镜和外部收缩技术（如SIMS和TEM）进行分析。测定铋含量和各种生长参数对材料带隙、光学活性和形态质量的影响。这些材料的增长直到最近才被报道，这些材料的进一步发展将导致未来雪崩光电二极管（APD）器件的实现。

This project aims to investigate the impact of Bismuth incorporation in the quaternary III/V semiconductor materials of InGaAsBi and InAlAsBi grown via MBE on a InP substrate. Materials grown will be analyzed using photo-luminescent spectroscopy, XRD, Nomarski microscopy and externally contracted techniques such as SIMS and TEM. The effects of bismuth content and various growth parameters on the materials band gap, optical activity and morphological quality will be determined. The growth of these materials has only recently been reported and further development of these materials will lead to implementation in future Avalanche Photodiode (APD) devices.