Electro absorption modulators based on SiGe on insulator

基于绝缘体上 SiGe 的电吸收调制器

• 批准号: 2625050
• 金额: --
• 依托单位: University of Southampton
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2019
• 资助国家: 英国
• 起止时间: 2019 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-2625050
• 关键词: Electro; absorption; modulators; based; SiGe

The research topic will be focused on the fabrication of transceivers based on Ge and SiGe on insulator aimed to meet interconnect needs for data centres/HPC requirements. The work would build up on processes patented in Southampton and a recently demonstrated process enabling the SiGe to be grown on SOI. The process of depositing SiGe is done in collaboration with COMO in Milano (http://lness.como.polimi.it/sige.php) and the project work would be to design/simulate new EAM and detector devices using the process that has been developed to date. The industrial partner of this project would be Rockley photonics.The requirement of this project is to develop SiGe EAM modulator/detector devices working at different wavelengths in the C-BAND.

研究主题将集中在基于绝缘体上Ge和SiGe的收发器的制造上，旨在满足数据中心/HPC要求的互连需求。这项工作将建立在南安普顿的专利工艺和最近演示的工艺基础上，使硅锗能够在SOI上生长。沉积SiGe的过程是与米兰的COMO合作完成的（http：//lness.como.polimi.it/sige.php），项目工作将是使用迄今为止开发的过程设计/模拟新的EAM和检测器器件。该项目的工业合作伙伴是Rockley Photonics，该项目的要求是开发工作在C波段不同波长的SiGe EAM调制器/检测器器件。