Near-Infrared Organic Semiconductor Materials for Optoelectronic Technologies
用于光电技术的近红外有机半导体材料
基本信息
- 批准号:2879451
- 负责人:
- 金额:--
- 依托单位:
- 依托单位国家:英国
- 项目类别:Studentship
- 财政年份:2023
- 资助国家:英国
- 起止时间:2023 至 无数据
- 项目状态:未结题
- 来源:
- 关键词:
项目摘要
The current success of organic semiconductor technology is mainly driven by the development of organic light-emitting diodes (OLED), which are now routinely employed in display technologies. In the last decade, however, organic photovoltaics (OPV), leveraging the impressive improvement in device efficiency and stability, have gradually moved from a lab curiosity to a niche market. Their recent success has coincided with the rapid development of organic semiconductor materials, both electron donors and electron acceptors, with absorption covering the UV-Vis-NIR part of the light spectrum.1 Through strategic design adopting different chemical building blocks, these new materials afforded high absorption with tuneable energetics into the NIR region of the electromagnetic spectrum. This allowed the development of NIR organic photodetector (OPD), novel photoacoustic probes for bioimaging applications, and more recently enabled the development of quinoidal conjugated polymers with open-shell character with distinctive opto-electronic and magnetic properties.2,3 This synergistic project will build on the expertise of the Schroeder group at UCL in the synthesis of low bandgap organic semiconductors and the know-how of the Gasparini group at ICL in the fabrication and characterisation of high efficiency NIR OPD devices. The project will focus on the design and synthesis of the next generation of NIR absorbing organic semiconductors with an absorption band extending deep into the NIR (~ 1600 nm) and their initial incorporation into OPD devices for NIR photodetection. The aim of this project is (i) to develop and synthesise novel NIR absorbing organic semiconductors and (ii) to obtain OPD with photodetection in the NIR region and low dark current (Jd). The chemical design of organic semiconductors with relatively narrow and specific absorption spectra will allow OPDs to be explored for selective narrowband NIR photodetection, where effective-material choices for biomedical applications and process monitoring remain scarce.
当前有机半导体技术的成功主要是由有机发光二极管(OLED)的发展驱动的,这些二极管(OLED)现在通常在展示技术中使用。然而,在过去的十年中,有机光伏(OPV)利用了设备效率和稳定性的令人印象深刻的提高,已经逐渐从实验室的好奇心转变为利基市场。它们最近的成功与有机半导体材料的快速开发(电子供体和电子受体)相吻合,吸收涵盖了光谱的UV-VIS-NIR部分。1通过战略设计采用不同的化学构建块,这些新材料可提供高吸收,并具有可调的能量为电子磁性的NIR元素。 This allowed the development of NIR organic photodetector (OPD), novel photoacoustic probes for bioimaging applications, and more recently enabled the development of quinoidal conjugated polymers with open-shell character with distinctive opto-electronic and magnetic properties.2,3 This synergistic project will build on the expertise of the Schroeder group at UCL in the synthesis of low bandgap organic semiconductors and the Gasparini组在ICL中的专业知识在高效NIR OPD设备的制造和表征中。该项目将集中于下一代NIR吸收有机半导体的设计和合成,吸收带深入NIR(〜1600 nm),并将其初始掺入到OPD设备中以进行NIR光电检测。该项目的目的是(i)开发和合成新型的NIR吸收有机半导体,(ii)在NIR区域和低暗流(JD)中获得具有光反射的OPD。具有相对狭窄和特定的吸收光谱的有机半导体的化学设计将允许探索OPD,以进行选择性窄带NIR光电检测,其中有效的生物医学应用和过程监测的物质选择仍然很少。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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