Development of new main group resists for electron beam lithography and direct writing of nanostructures

本课题的研究重点是制备含有13、14、15和16族元素的主族化合物和配合物。然后将这些配合物浇铸成薄膜，并使用电子束光刻（EBL）和极紫外（EUV）光刻技术研究图案制造。将重族14和重族15元素结合到使用这些集群的电阻中，预计将大大提高其写入速度，从而提高其性能。本工作处于合成主基团化学与电子器件纳米制造的交叉领域。我们还相信，这可能是一条直接写入纳米结构的途径，这种方式比现有技术更可持续。成功的申请人将接受有关液相配位化学原理和合成固态技术的培训，特别是适用于空气敏感材料。在材料方面，纳米制造技术的培训，包括EBL。还将提供表征工具的培训，如x射线晶体学，核磁共振光谱和质谱。

This research project will be focused on the preparation of main group compounds and complexes containing elements from both group 13, 14, 15 and 16. These complexes will then be cast into thin films and investigated in pattern fabrication using electron-beam lithography (EBL) and extreme ultraviolet (EUV) lithography. Incorporation of heavy group 14 and 15 elements into resists using these clusters is expected to drastically increase their write speed and thus their performance. This work lies at the interface of synthetic main group chemistry and the nanofabrication of electronic devices. We also believe this could be a route to direct writing of nanostructures in a way that is more sustainable that present technologies.The successful applicant will receive excellent training in the principles of solution phase coordination chemistry and synthetic solid-state techniques, specifically as applied to air-sensitive materials. On the materials side training in techniques for nanofabrication, including EBL. Training in characterisation tools such as X-ray crystallography, NMR spectroscopy and mass spectrometry will also be provided.