Multilayer thin film memristors: designing interfaces and defect states in perovskites for nanoscale multi-state memories
Multilayer thin film memristors: designing interfaces and defect states in perovskites for nanoscale multi-state memories
批准号:
DP130100062
负责人:
Prof Sharath Sriram
金额:
$22.39万
依托单位:
依托单位国家:
澳大利亚
项目类别:
Discovery Projects
财政年份:
2013
资助国家:
澳大利亚
项目状态:
已结题
起止时间:
2013-01-01 至 2015-12-31
中文摘要
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英文摘要
This project will explore memristive devices, a frontier electronic memory technology, where the memory element's behaviour depends on its prior electronic experiences. This project will attempt to understand the processes that govern the storage and recall of information, to realise functional materials and interfaces that maximise memristive performance.
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