Physics and applications of III-V semiconductor lasers

申请资金用于支持非对称多量子阱（AMQW） III-V型半导体二极管激光器的物理和应用研究项目。此外，申请资金支持通过分析材料和器件发光的偏振度（DOP）来分析III-V材料和器件的研究。

Funding is requested to support a program of research on the physics and applications of asymmetric multiple quantum well (AMQW) III-V semiconductor diode lasers. In addition, funding is requested to support research on analysis of III-V materials and devices by analysis of the degree of polarization (DOP) of luminescence from the materials and devices. Research on AMQW semiconductor diode lasers provides insight into the operation of semiconductor diode lasers. The market for semiconductor diode lasers is estimated at 3.5 billion dollars for 2010. Thus the suggested program of research has industrial and economic relevance. AMQW diode lasers have broad gain peaks and can be designed to operate over a broad range of wavelengths. These lasers thus can be applied effectively to metrology. It is expected that the research will result in knowledge and understanding of both AMQW and non-AMQW diode lasers and will create applications in metrology that would not be viable without AMQW diode lasers. Analysis of III-V materials by analysis of the DOP of luminescence was developed by the applicant and his research team. The DOP of luminescence is related to strain in materials. Strain is important in the reliability of devices, particularly for devices used in telecommunications. The research program exposes students to a wide range of hands-on skills, and requires a broad knowledge base and critical thinking. Graduates thus have the skills and attitude to tackle a wide range of jobs and to contribute to society.