Investigation of the role of isolation-feature geometry in improving the threshold-voltage adjustability and power-handling of polar III-Nitride HFETs, and physics-based modeling of the gate-current

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Over the past two decades research on wide-bandgap polar AlGaN/GaN heterostructure field effect transistors (HFETs) has resulted in a rapidly growing market in the area of high-frequency/high-power transistors. As the share of this market is inching towards the billion-dollar mark, innovative solutions for improving the transistors’ power-handling/heat-management, and for reliable realization of both enhancement- and depletion-modes of operation (i.e. having a positive and negative threshold-voltage, respectively) are gaining a more prominent status.