High efficiency and broadband fully integrated MMIC power amplifiers using GaN technology for space and terrestrial wireless communication

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Research activities in the last decade have proven that the emerging Gallium Nitride (GaN) high-electron mobility transistors (HEMTs) are the superior technology choice for future designs of the power amplifier (PA), which is one the most challenging to design components in a wireless communication link for space and terrestrial communication applications. On the application side, the continuously increasing needs for higher data rates along with the need for beam steering reconfigurability is driving new wireless terrestrial and satellite communication standards to increase the communication bandwidth and operating carrier frequency as well as to adopt advanced transmission solutions such as massive multiple input multiple-output (MIMO) topologies and reconfigurable beam steering. As a consequence, there is currently a high interest in conducting research activities in fully integrated monolithic microwave integrated circuit (MMIC) GaN PA designs suitable for integration with antenna array systems.