High efficiency and broadband fully integrated MMIC power amplifiers using GaN technology for space and terrestrial wireless communication

在过去的十年中，研究活动已经证明，新兴的氮化镓（GaN）高电子迁移率晶体管（HEMT）是未来功率放大器（PA）设计的上级技术选择，这是设计用于空间和地面通信应用的无线通信链路中的元件的最具挑战性的元件之一。在应用方面，对更高数据速率的持续增长的需求沿着对波束控制可重新配置性的需求正在推动新的无线地面和卫星通信标准以增加通信带宽和操作载波频率以及采用先进的传输解决方案，诸如大规模多输入多输出（MIMO）拓扑和可重新配置的波束控制。因此，目前有很高的兴趣进行研究活动，在完全集成的单片微波集成电路（MMIC）GaN PA设计适合与天线阵列系统集成。

Research activities in the last decade have proven that the emerging Gallium Nitride (GaN) high-electron mobility transistors (HEMTs) are the superior technology choice for future designs of the power amplifier (PA), which is one the most challenging to design components in a wireless communication link for space and terrestrial communication applications. On the application side, the continuously increasing needs for higher data rates along with the need for beam steering reconfigurability is driving new wireless terrestrial and satellite communication standards to increase the communication bandwidth and operating carrier frequency as well as to adopt advanced transmission solutions such as massive multiple input multiple-output (MIMO) topologies and reconfigurable beam steering. As a consequence, there is currently a high interest in conducting research activities in fully integrated monolithic microwave integrated circuit (MMIC) GaN PA designs suitable for integration with antenna array systems.