High efficiency and broadband fully integrated MMIC power amplifiers using GaN technology for space and terrestrial wireless communication

过去十年的研究表明，新兴的氮化镓（GaN）高电子迁移率晶体管（hemt）是未来设计功率放大器（PA）的最佳技术选择，而功率放大器是空间和地面通信应用中最具挑战性的无线通信链路设计组件之一。在应用方面，对更高数据速率的不断增长的需求以及对波束转向可重构性的需求正在推动新的无线地面和卫星通信标准，以增加通信带宽和运行载波频率，并采用先进的传输解决方案，如大规模多输入多输出（MIMO）拓扑和可重构波束转向。因此，目前人们对适合与天线阵列系统集成的全集成单片微波集成电路（MMIC） GaN - PA设计的研究活动非常感兴趣。

Research activities in the last decade have proven that the emerging Gallium Nitride (GaN) high-electron mobility transistors (HEMTs) are the superior technology choice for future designs of the power amplifier (PA), which is one the most challenging to design components in a wireless communication link for space and terrestrial communication applications. On the application side, the continuously increasing needs for higher data rates along with the need for beam steering reconfigurability is driving new wireless terrestrial and satellite communication standards to increase the communication bandwidth and operating carrier frequency as well as to adopt advanced transmission solutions such as massive multiple input multiple-output (MIMO) topologies and reconfigurable beam steering. As a consequence, there is currently a high interest in conducting research activities in fully integrated monolithic microwave integrated circuit (MMIC) GaN PA designs suitable for integration with antenna array systems.