拓扑电子态因其具有新奇的物理性质引起了广泛的研究兴趣。按照系统的能带结构，拓扑电子态可分成拓扑绝缘态和拓扑半金属态。基于我们的工作基础，本项目拟开展如下两种拓扑体系的材料研究: (1)量子反常霍尔材料。将通过第一性原理方法，在近期理论上论证或实验上证实了的二维拓扑绝缘体中设计当前实验技术条件下容易实现的量子反常霍尔材料体系，为实验提供理论依据和材料支持。(2)研究拓扑半金属中Node-Line半金属的材料计算与设计。研究目标是寻找到更多的候选材料，并通过有效模型研究材料的物理性质。同时探讨从Node-Line材料出发，得到狄拉克半金属，外尔半金属和量子反常霍尔态的材料设计方案。本项目预期能在拓扑电子态研究领域取得一些有特色的原创性成果。

Topological electronic states have generated great interesting due to its exotic properties. According to the electronic band structure, topological electronic states can be classified as topological insulators and topological semimetals. Based on our previous works, we propose a project to study the following two topological quantum states: (1) Using the first-principles calculations we study the quantum anomalous Hall materials based on the proposed two dimensional topological insulators. We explore and design the realistic materials which are practicable in the current experimental techniques. We hope to give theoretical guide and materials supports to experiment. (2) We search and design the Node-Line semimetal materials. The research goal is to explore more candidate materials for experiment and study its physical properties by using the effective models. We explore the route to design Dirac semimetal, Weyl semimetal and quantum anomalous Hall materials by using Node-Line semimetals. It is anticipated the proposed research will make some distinctive original achievements in the research area of the topological electronic states.