在合适的母体化合物中进行掺杂和以低维超导层辅以载流子层构造新的化合物是探索新超导体的两种基本方法。我们主要的研究兴趣是以这两种手段探索分别以EuF层和ThN层为载流子层的新BiS超导体。我们成功合成了EuBiS2F和Eu3F4Bi2S4两个自掺杂超导体，本项目拟在前期工作的基础上通过不同的掺杂手段提高载流子浓度，研究其超导转变温度以及Eu的磁性之间的关系并绘制相关相图。ThFeAsN超导样品的发现为我们提供了一个新的载流子层。我们拟尝试合成分别与EuBiS2F和Eu3Bi2S4F4相同结构ThBiS2N和Th3Bi2S4N4样品，为BiS超导家族增加新的成员。

Through long-term effort, one has learned two basic rational routes for searching new superconducting materials. The first one is to carry out chemical doping in a so-called parent compound which is potentially superconducting. The other is to synthesize a new compound that contains low-dimensional superconductive layers via structural design. Our interests are mainly focused on the BiS2 layered superconducting compounds, which contain the EuF or ThN layer as the carrier stocking layer. We have synthesized two novel self-doping BiS2-based superconductors, EuBiS2F and Eu3Bi2S4F4. I plan to explore new superconductors by doping rare-earth elements into these two compounds and study the relationship between carrier doping level with Tc, Eu valence and magnetism. The discovery of new iron based superconductor, ThFeAsN, provides a novel carrier stocking layer. We try to design and synthesize two BiS2 superconductors ThBiS2N and Th3Bi2S4N4 which share the same structure with EuBiS2F and Eu3Bi2S4F4, respectively.