钴基Full-Heusler合金是一类具有高自旋极化率的铁磁性金属间化合物，在自旋电子学方面有着广阔的应用前景。然而，造成半金属不稳定的退极化因素以及噪声特征参数削弱了这类材料的性能，限制了其在薄膜器件中的发展。本项目将以Co2Mn1-xCrxSi和Co2FeAl1-xGex合金材料为基础，首先分析不同的掺杂浓度对块状材料的晶格常数和磁学性质的影响，以调控退极化因素。围绕制备高质量铁磁性薄膜电极材料，结合输运性质和噪声特性等系列测试，开展掺杂效应对结构和磁性能的影响机制研究，揭示掺杂、噪声和磁性能之间的互相作用机制，形成对掺杂薄膜磁性材料性能的评估体系，探索降低噪声水平的方法。在此基础上，进行微波激励下的掺杂薄膜器件的特性研究，分析薄膜磁各向异性和噪声特性与薄膜形状尺寸之间的关系，提升器件的信号-噪声比（S/N），为该类薄膜器件的应用打下坚实的基础。

Cobalt-based Full-Heusler alloy is a kind of ferromagnetic intermetallic compound with high spin polarization, which has a wide application prospect in spintronic field. However, the depolarization factors of semi-metal and noise characteristic parameters seriously weaken the performance of this material and limit its application in the thin film device. Based on Co2Mn1-xCrxSi and Co2FeAl1-xGex alloy material, we will first analyze the effects of different doping concentrations on the lattice constant and magnetic properties of bulk material, so as to control the depolarization factors. In order to obtain high quality ferromagnetic thin film electrode material, combined with the transport mechanism and noise characteristic, the influence mechanism of doping effect on the structure and magnetic properties will be studied. It can reveal the interaction between doping effect, noise and magnetic property. The evaluation system of doped material thin film will be formed, and look for the method to reduce the level of noise. Based on that, we will study the characteristic of doped thin film device under microwave excitation. The relationship between anisotropy, noise characteristic and thin film size will be analyzed for optimizing the signal to noise (S/N) of device, which can lay a solid foundation for the future application.