强关联f电子局域-巡游特性的精确调控和表征

4f/5f电子的局域-巡游双重特性是理解重费米子材料各种奇异量子现象的关键因素，如量子临界、非常规超导电性、磁有序、隐藏序等，对我们深刻理解U、Pu等核材料的复杂物性也具有借鉴和指导意义。本项目将围绕NSAF指南，深入研究4f/5f电子材料复杂物性的f电子微观起源，具体将开展以下几个方面的研究：（1）f电子局域-巡游特性的精确调控，通过掺杂、界面、维度等手段精确调控重费米子材料的局域-巡游特性；（2）典型强关联f电子材料输运行为研究，通过输运性质测量研究宏观物性与f电子局域-巡游特性的关系。（3）典型强关联f电子材料电子结构研究，结合角分辨光电子能谱和扫描电子显微镜两种手段研究典型强关联f电子体系在发生局域-巡游转变时电子结构特征并挖掘其物理内涵。（4）典型强关联f电子体系的第一性原理计算，对典型强关联f电子体系的基态和激发态进行理论模拟，解释实验现象，预测新奇物性。

The localized-itinerant duality of 4f/5f electrons is the key to understanding various exotic quantum phenomena in heavy fermion systems, including quantum criticality, unconventional superconductivity, magnetic order, and hidden order. It is also of instructive and directive significance to a deep insight of the complex physical properties of U- and Pu-based nuclear materials. Based on the NSAF Guidance, this project will conduct in-depth research on the f-electron microscopic originality of the complex physical properties of 4f/5f-electron materials, including: (1) Fine tuning of the localized-itinerant property of the f-electron: fine tuning of the localized-itinerant properties of the heavy-fermion materials via means of doping, interface, and dimensionality. (2) Transport study: investigating the relationship between the macroscopic physical properties and the localized-itinerant property of the f-electron via transport study of typical strongly correlated f-electron materials. (3) Electronic structure study: investigating the electronic structure characteristics and its physical indication around the localized-itinerant transition via the combination of angle resolved photoemission spectroscopy and scanning tunneling microscopy. (4) First principle calculation: theoretical estimation of the ground and excited states of typical strongly correlated f-electron materials through first principle calculation to explain experimental results and predict new exotic physical properties.