半导体自旋电子学的一个长远目标是在一个独立的器件中实现自旋的电学注入、调制和探测，而侧向自旋阀是利用全电学方法研究自旋输运性质的最重要结构之一。本项目拟设计并制备出基于Co2FeMnAl/n+GaAs/n-GaAs和Co2FeMnAl/MgO/Si异质结的侧向自旋阀,利用全电学的方法研究自旋在半导体材料中的输运性质。我们计划利用全分子束外延生长技术生长制备出上述两种异质结,并开展Co2FeMnAl薄膜的结构和磁学性质研究。然后,利用常规的微纳加工手段将上述两种异质结制备成侧向自旋阀。最后，采用在注入端加恒定电流的办法测量探测端的输出电压随平行于器件磁场和注入电流的变化关系，并通过观测Hanle效应研究半导体材料中的自旋输运性质（自旋扩散长度、自旋弛豫时间和自旋极化度等）。本项目的顺利进行将为开发多功能自旋电子学器件提供研究基础。

A longstanding goal of research in semiconductor spintronics is the ability to inject, modulate and detect spin-polarized carriers electrically in a single device. Lateral spin valve is one of the most important devices for investigating spin transport properties. In this project, we will design and prepare lateral spin valves based on Co2FeMnAl/n+GaAs/n-GaAs and Co2FeMnAl/MgO/Si junctions, then spin transport properties in the semiconductor channels will be investigated using all electrical measurement. We will firstly fabricate these two junctions using molecular-beam epitaxy and investigate the structure and magnetic properties of Co2FeMnAl films. Then, standard photolithography and etching techniques will be performed on these two junctions to define electrodes and channels. Finally, the magnetoresistance measurements will be carried out by sweeping the magnetic field parallel to the device surface, and the bias current dependence of output signals will be discussed. Furthermore, we will investigate the spin transport properties(spin diffusion length, spin lifetime and spin polarization) in the semiconductor channels through Hanle effect. This project will provide useful research cases for fabricating new kinds of spintronic devices.