基于P(VDF-TrFE)基忆耦器磁电耦合效应的柔性存储器研究

为应对可穿戴式电子设备的迫切需求，发展具有柔韧性和便携性特点的柔性存储器十分重要。特别是基于磁电耦合效应的非易失性存储器，它具有并行且非破坏性读取，低功耗以及高速率等优势，为发展柔性信息存储器件提供了新的可能性。在研究基于磁电耦合效应的柔性存储器方面，提高磁电耦合系数并将柔韧性与磁电耦合效应结合是关键问题。P(VDF-TrFE)有机材料作为一种无污染、柔韧性好、易制备且具有挠曲电效应的柔性铁电薄膜，在合成柔性复合多铁性材料方面具有优势。本项目拟选择P(VDF-TrFE)薄膜，通过添加绝缘纳米颗粒填充物的形式，提高压电效应，与磁性材料合成层状和纳米有机复合多铁性材料，提高磁电耦合系数。弯曲忆耦器，研究磁电耦合效应与挠曲态的关系，并结合P(VDF-TrFE)的挠曲电效应分析磁电耦合效应的变化。本项目的开展有助于完善人们对柔性材料磁电耦合效应的认识，指导柔性器件的进一步发展。

To the urgent need for wearable devices, it is of great importance to develop the flexible memory with flexibility and portability. The non-volatile memory based on the magnetoelectric effect has the advantages of parallel and non-destructive reading, low power consumption and high speed, which gives the possibility of developing flexible information storage devices. To develop the flexible memory based on the magnetoelectric effect, it is a key issue to improve the magnetoelectric coefficient and combine flexibility with performance. The flexible composite multiferroics can be fabricated by the P(VDF-TrFE) organic ferroelectric film, due to its characteristic of non-pollution, easy preparation, good flexibility, and flexoelectricity. In this project, we propose to prepare layered and nano-composite multiferroics using P(VDF-TrFE) and magnetic materials for the purpose of increasing the magnetoelectric coefficient. The piezoelectric effect of P(VDF-TrFE) can be improved by adding insulating nano-particle fillers. The relationship between the magnetoelectric effect and the flexure state is to be researched by bending the memtranstor and analyzed by the flexoelectricity. This project will improve the understanding of the magnetoelectric effect of flexible materials and guide the further development of the flexible device.