反铁磁材料是下一代自旋电子学研究的前沿热点材料，在诸如高速赛道存储中具有重大潜在应用价值。如何快速有效、节能可靠地调控反铁磁畴结构与畴壁动力学是反铁磁自旋电子学的核心关键问题。本申请将立足于开发高效理论模拟计算方法，关注大尺寸反铁磁体系有限温度下的畴壁动力学行为，探索低损耗高效调控反铁磁畴壁的机制与方法，揭示反铁磁斯格明子稳定性的调控途径，阐明缺陷对反铁磁畴壁和斯格明子的钉扎效应。本项目以理论模拟计算为重点，以反铁磁畴壁和斯格明子动力学为主线，通过创新性探索研究，为相关实验设计和器件开发提供有益理论预测与指导。

Antiferromagnets are promising materials for spintronics, potentially playing an essential role in the next generation racetrack memory. The efficient modulation of antiferromagnetic (AFM) structures and domain wall (DW) dynamics with reliable and energy saving methods is one of the core issues of AFM spintronics. This project proposes to develop high efficient theoretical methods to investigate DW dynamics at finite temperatures in large-scale systems, and to uncover new mechanisms and low energy loss methods in modulating AFM DW. Additionally, we aim to study the enhancement of the reliability of AFM skyrmions and to clarify pinning effects of defects on AFM DW and skyrmions. We focus on theoretical calculations to obtain a deeper understanding of the dynamics of AFM DW and skyrmions, in order to provide useful information for future experiments and device design through this innovative research.