负电子亲和势半导体光阴极注入器是推动未来高平均功率自由电子激光和能量回收型直线加速器发展的最关键的技术之一。激光加载会对负电子亲和势半导体光阴极的激活层产生破坏，影响注入器电子源的工作寿命，是目前半导体光阴极电子源技术发展的主要限制之一。本课题拟建立激光加载对负电子亲和势半导体光阴极激活层破坏的物理模型，从理论和实验上研究激光加载对激活层造成的热损伤、冲击应力损伤和激光等离子体损伤，并针对不同的激活层开展研究工作。本课题的研究成果将为提高负电子亲和势半导体光阴极工作寿命提供理论支持，对未来高平均功率高亮度光阴极注入器提供技术储备。

The negative electron affinity (NEA) semiconductor photocathode injector is one of the key technologies which promote future high average power free electron laser (FEL) and energy recovery linac (ERL). The laser loading would destroy the activation layer of the NEA semiconductor photocathode and affect the life time of injector electron source, which is a major limitation for the development of semiconductor photocathode electron source technology. In this thesis the physical model of destruction of laser loading on NEA semiconductor photocathode activation layer would be established, and the studies would be conducted on thermal damage, impact stress and laser plasma damage of the activation layer affected by laser loading both theoretically and experimentally for various of activation layers. The results can provide theoretical support for the life time improvement of the NEA semiconductor photocathode and technology reserve for future high average power and high brightness photocathode-injector.