基于掺硼直拉单晶硅片的Al-BSF和PERC太阳电池光衰及其抑制的基础研究

由掺硼直拉单晶硅片制备的铝背场（Al-BSF）电池和PERC （Passivated Emitter and Rear Cell）电池的光衰（LID）问题极大地限制了它们的发展，这与与此有关的一些基础科学问题仍未得到很好的解决有关，譬如引起这两种电池LID的因素有哪些？它们对电池LID贡献的比例是多少？针对这两个科学问题，本项目将利用最新发展出的复原（regeneration）技术来消除硼-氧缺陷引起的LID，利用原子层沉积（ALD）Al2O3并退火来除去硅片内的过渡金属杂质进而消除金属杂质引起的LID。根据可能存在的各种光衰的特点，通过巧妙设计实验来分离引起这两种电池LID的因素及其对电池LID贡献的比例。在此基础上，寻求彻底消除这两种电池LID的方法。预计本项目研究成果对于进一步认识和寻求基于掺硼直拉单晶硅片的Al-BSF 电池和PERC 电池的LID问题的彻底解决具有重要的参考价值。

The development of Al-BSF and PERC solar cells based on boron-doped Czochralski silicon (Cz-Si) wafers has been greatly limited by their LID (light induced degradation) problems, which is to a large extent related to some basic scientific issues about LID of these two solar cells being unsolved until now, for example, what are the factors that induce the LID of these two solar cells? And what is the proportion of their respective contribution to the LID of these two solar cells? To solve these two scientific problems, we will use the latest-developed regeneration technology to eliminate boron-oxygen defects induced LID, and use atomic layer deposition (ALD) of Al2O3 and subsequent annealing to eliminate the transition metal impurities in Cz-Si wafers and the related LID, and decouple these LID factors and their respective contributions to the LID of these two solar cells by skillfully designing the experiment according to the characteristics of various possible LID factors. On this basis, find a method to fully eliminate the LID of these two solar cells. It is expected that the research results will be of great reference value to deepen the knowledge and find a permanent solution to the LID problems of Al-BSF and PERC solar cells based on boron-doped Cz-Si wafers.