课题针对Ni-Mn-Ga磁性记忆合金驱动磁场门槛值高这一应用关键瓶颈，提出利用质子辐照调整磁性原子的电子结构及原子局域结构，提高磁晶各向异性和磁化率，降低驱动磁场门槛值的新思路。课题在研究入射质子与晶格原子交互作用基础上，探明以多类型辐照缺陷为主导的微观组织结构演化，阐明多类型辐照缺陷与马氏体孪晶界面原子交互作用，建立缺陷作用下孪晶界面运动规律，结合宏观磁感生应变行为测试，建立辐照缺陷—磁精细结构—孪晶界面及其可动性—驱动磁场门槛值的关联性，为低驱动磁场门槛值磁性记忆合金研究提供理论指导。

The research focuses on the bottleneck of Ni-Mn-Ga magnetically shape memory alloy as an actuiator materials in MEMS - its high critical driving magnetic field. Proton irradiation was proposed as a new method to adjust electronic and atomic local structure of magnetic atoms, improve magnetocrystalline anisotropy and susceptibility and decrease the critacal driveing magnetic field of Ni-Mn-Ga alloy. Based on the study of the interaction between incident protons and lattice atoms, the microstructure evolution of multi-type defects induced by proton irradiation is studied, and the interaction of mult-type defects and twin boundary atoms is clarified. Then the effect of irradiation defects on the twin boundary mobility is discussed. After that, the correlation of the irradiation defects, mangetic fine structure, twin boundary characteristics and its mobility and the critical driving magnetic field is build, which provide a theoretical guidance for the study of magnetic memory alloy with low crtical driving magnetic field.