原位加热对有机半导体发光器件的电子-空穴自旋组态演化过程及光-电-磁-热性能的影响

有机半导体发光器件在工作状态时，环境温度和自身产生的热量会导致器件温度升高，降低器件的性能及寿命。由于器件性能及寿命与其电子-空穴自旋组态演化过程息息相关，因此十分必要从微观态的电子-空穴自旋组态演化过程层面来研究器件的光-电-磁-热性能。本项目针对这一问题预研了两种器件，研究了原位加热对有机半导体发光器件的光电性能及热稳定性影响。我们将通过分析器件的磁场效应、表面形貌、光谱、I-B-V特性曲线，探明原位加热对器件的电子-空穴自旋组态演化过程及光-电-磁-热性能的影响，揭示高温环境中电子-空穴自旋组态演化过程的物理机制；通过掺杂方法优化器件结构，调节载流子注入平衡，降低界面势垒和电阻，最终提高器件光电性能及热稳定性。该项目旨在通过研究高温环境下器件光-电-磁-热性能的变化规律，揭示电子-空穴自旋组态演化的物理机制，提高器件的光电性能及热稳定性，具有重要的科学实用价值。

When the organic semiconductor light emitting device is under working conditions, the ambient temperature and the heat generated by itself will cause the temperature of the device to rise, reducing the performance and life of the device. Since the performance and lifetime of the device are closely related to the electron-hole spin configuration evolution process, it is necessary to study the optical-electrical-magneto-thermal performance of the device from the level of the electron-hole spin configuration evolution process of the microscopic state. In this project, two devices are pre-researched for this problem, and the effects of in-situ heating on the photoelectric performance and thermal stability of organic semiconductor light-emitting devices are studied. Through analyzing the magnetic field effect, surface morphology, spectrum, I-B-V characteristic curve of devices, we will explore the effects of in-situ heating on the electron-hole spin configuration evolution process and optical-electrical-magnetic-thermal properties of devices, and reveal the physical mechanism of the electron-hole spin configuration evolution process under high temperature environment. We plan to optimize devices structure by doping methods, adjusting the carrier injection balance, depressing interface barriers and resistance so as to Improve the photoelectric performance and thermal stability of devices. This project aims to reveal the physical mechanism of the electron-hole spin evolution by studying the changes in the optical-electrical-magnetic-thermal properties of devices under high temperature environments, and to improve the photoelectric performance and thermal stability of devices, which are contribute to significant scientific and practical values.