本课题旨在结合纳米互穿网络本体异质结薄膜的构造特点，采用我们成功开发的元素直接反应方法，以单质铅为前驱体，大面积原位构建基于钙钛矿结构的本体异质结薄膜太阳能电池器件，并显著提高器件重复性及稳定性。这种全新的钙钛矿制备方法无需旋涂过程，钙钛矿层结晶性好，能有效解决大尺寸器件制作问题，并有利于研究PbI2界面结构对器件稳定性的影响。室温原位生长的Ag2S、CuI等作为电子或空穴传输层，既降低成本、节能环保，又可扩展器件对近红外光谱的响应。从材料制备、光谱响应、转换效率、稳定性等因素综合考虑，运用表面光电压（SPV）及Kelvin探针等技术，分析光生载流子的传输、复合及少数载流子寿命，深入研究原位制备钙钛矿组分调控、电子或空穴传输层的选择（能带调控及能级匹配）、异质结微界面调控及成膜方式的选择等与电池器件效率及稳定性之间的关系，建立基于元素直接反应的钙钛矿本体异质结薄膜太阳能电池器件模型。

By use of the structural characteristic of interpenetrating bulk heterojunction thin film, we plan to fabricate bulk heterojunction films of perovskite/inorganic and the corresponding thin film solar cell devices through a facile elemental direct reaction route. Using elemental Pb as precursor to fabricate perovskite may facilitate the investigation of the effect of PbI2 interface structures on the device stability. This fabrication does not require a spin-coating process, which is a potential solution for thin film solar cell devices with large area. More importantly, such an in situ construction of the perovskite layer as well as the bulk heterojunction solar cell devices has many advantages. For instance, the nanostructure and morphology of the perovskite layer is well controlled with high crystallinity, so that the reproducibility of the device would be significantly improved. Secondly, the in situ formed Ag2S or CuI films can act as the transportation layers for electron or holes, respectively. Thirdly, the room temperature synthesis shows dramatic advantages for environments, cost-reduction and energy saving. Moreover, the use of narrow band-gap materials such as Ag2S may increase the absorption response of the solar cell device in the near IR region.. Taking into account of the materials fabrication, cost, spectra response, power conversion efficiencies, energy-saving and environment, the applicants will apply the surface photovoltage (SPV) and Kelvin probe and other techniques, to thoroughly study the relationships between the perovskite composition tuning, the material selection for the electron (or hole) transportation layer (requires the alignment of the band structures), the micro-interface modulation for the heterojunctions and the film deposition methods, with the charge separation, transportation, recombination, the minority charge carrier lifetime (diffusion length), as well as the device stability. Based on these studies, we aim to develop a rational fabrication route for perovskite-based bulk heterojunction thin film and the corresponding solar cell device models.