SiC功率器件低温金属接触研究：界面缺陷等离子体钝化及势垒纳米调控

碳化硅(SiC)是制备高效节能的功率器件最理想的半导体材料，基于SiC的功率器件研究备受关注。然而，目前阻碍SiC器件发展应用的一个重要瓶颈是金属接触制备困难。其主要原因是传统退火工艺制备的SiC欧姆接触和肖特基接触界面非常复杂，决定金属/SiC接触性能的肖特基势垒无法得到有效控制。.本项目拟对金属/SiC接触界面态本质和起源、界面势垒调控机理及策略进行系统的理论和实验研究，并研发低温界面调控新技术解决SiC功率器件金属接触制备难题。主要研究内容包括：⑴SiC表面缺陷及低温等离子体钝化新技术研究；⑵金属/SiC接触界面：界面态本质与决定接触性能的肖特基势垒形成关联性调控机理研究；⑶基于局部电场改性的低温金属/SiC接触界面等离子体钝化与纳米调控新技术及微观机理研究。本项目的研究结果将为提高金属/SiC接触肖特基势垒的可控性，低温环境制备高性能的SiC欧姆接触和肖特基接触提供有效方案。

Silicon carbide (SiC) is an ideal semiconductor material for effective and energy-saving power devices. The SiC power devices have been drawing great attention. However, one of the main bottleneck hindering the further development and application of SiC power devices is the fabrication of good metal contacts to SiC. The main reason lies in that the interface properties of SiC Ohmic and Schottky contact formed by traditional annealing processes are very complicated. The Schottky barrier properties which determine the metal/SiC contact performance cannot be controlled effectively.. In this project, the nature and origin of metal/SiC interface states, the barrier modulation mechanism and strategy of metal/SiC contacts will be experimentally and theoretically investigated. Based on this, a novel low temperature control technology for metal/SiC interface will be developed to overcome the challenge of good metal contact fabrication in production of SiC power devices. The main research contents include: (1) Study on the defects and novel low temperature plasma passivation technology of SiC surface; (2) Study on the metal/SiC interface: the nature and origin of interface states and their relation to the Schottky barrier to get modulation mechanism and strategy of metal/SiC interface; (3) Study on novel low temperature plasma passivation and nano-embedded technology to modify the local electric field of metal/SiC interface, and the corresponding micromechanisms. The research results of this project will provide effective solutions in improving the controllability of Schottky barrier at metal/SiC contact interface to fabricate high performance SiC Ohmic and Schottky contacts at low temperature.