针对高性能X-CT的应用需求和未来发展趋势，开展硅光电二极管耦合用关键闪烁材料的设计制备研究，以高密度、发光效率高的Ce：LuAG闪烁透明陶瓷为基础体系，选取与Al3+离子半径（0.05 nm）接近的过渡金属发光离子 Cr3+（0.068 nm）进行八面体格位替代，研究通过第一性原理导带和能级结构的计算，材料制备组分调控，将主发光在550nm的Ce3+发光与主发光在730m的Cr3+的发光叠加，达到发光光谱展宽，并研究高光效发光的组分调控方案，最终材料与硅光二极管探测灵敏区匹配良好，实现可见和近红外闪烁发光的叠加展宽，应用于高性能X-CT机中。

Considering the requirement of X-CT apparatus and its future upgrading, this project is planning to focus on the study of key materials and technologies to couple with the high resolution of Silicon photo electric dioed detectors, the emphasis is on scintillator ceramics of Ce: LuAG having performance of high density, high luninescence efficiency. By codoping the transition metal ions Cr3+ (ionic radius 0.068nm) to the octahedron site in LuAG lattice replacing the Al3+ (ionic radius 0.05nm) to realize the luminescence spectrum design. It is aimed to investigated the first principle method, micro-chip screen method as well as the fabrication technology of high transparent ceramics to study the effect of transition metal ions on spectrum broadening by overlap the Ce3+ emission at 550nm and Cr3 at 730nm. It is expected to contribute to the application of X-CT technology of our country by the study of this project.