中子探测技术在众多科学领域研究中发挥着重要作用。传统半导体中子探测器能量分辨率高，线性范围广，但受限于中子转换材料的厚度和界面自吸收效应，导致探测效率低。本项目拟发展兼具中子转换与探测于一身的6LiXSe2(X=In,Ga)晶体和器件，通过对晶体结构缺陷和物理性能的表征，探索影响其能量分辨率的关键因素。主要研究：(1)掌握布里奇曼法生长6LiXSe2晶体的理论和技术，揭示化学计量比偏离造成的结构缺陷的形成机制和相互作用规律。(2)发展后续晶体退火技术，实现对本征点缺陷和富Se相的调控，优化晶体电学性能和载流子传输特性。(3)完善探测器的设计与制备，建立晶体物理性能与α粒子和中子响应的关系，归纳影响探测器效率、时间响应和能量分辨率的主要因素。通过优化晶体生长和退火改性技术，获得满足位置灵敏中子探测应用要求的大尺寸6LiXSe2单晶，为推动我国中子散射多学科研究平台的建设奠定理论和技术基础。

Neutron detection has been applied and plays an important role in many fields. The stat of the art semiconductor neutron detector has high energy resolution and wide linear range. However, the detection efficiency is limited due to the thinner thickness of the neutron conversion material and the interface self-absorption effect. In this project, the vertical Bridgman method will be employed combined with the ACRT technique to grow 6LiXSe2(X=In, Ga) crystals, which act as both neutron conversion and detection materials. Meanwhile, the structure defects behaviors and its physical properties will be investigated. The key parameters which determine detector energy resolution will be explored. The main research proposals are as follows: (1) To achieve the theory and technique for 6LiXSe2 crystal growth based on the VB method. The formation mechanism and coupling effects multi-defects, which associated with the stoichiometric deviation, are evaluated. (2) To tailor the density and distribution of intrinsic point defects and Se-rich secondary phase particles, the multi-stage post-growth annealing techniques are developed. In turn, the electrical properties and carrier transport behaviors are optimized. (3) The design and fabrication of 6LiXSe2 detector are refined. The correlation between 6LiXSe2 properties and the resulting α or neutron response spectra is discussed. The key factors which influence the detection efficiency, time response and energy resolution of the 6LiXSe2 semiconductor detector are concluded. Finally, the large size 6LiXSe2 crystals with satisfied performances for position sensitive neutron detection will be obtained by optimizing the crystal growth and the multi-steps wafer annealing, in turn, to promote the development of multidisciplinary research platform for neutron scattering and the corresponding technology in China.