项目拟充分发挥我国首台太赫兹（THz）自由电子激光（FEL或CTFEL）具皮秒脉宽微脉冲和高单脉冲功率的特性，应用我国在高灵敏THz探测器研制取得的具国际先进水平的成果，在CTFEL装置上搭建首创的“皮秒THz FEL泵浦-皮秒THz探测”实验平台，并实现其独特的先进测量功能。依托此实验平台，并针对Hall和量子Hall效应这一凝聚态物理学研究的前沿课题，将在室温、无外加磁场的条件下，研究二维过渡金属硫化物（如单层MoS2和WS2）谷电子学材料由于与衬底的邻近效应导致电子能量在不同能谷简并消除诱导的光探测Hall效应，力争在国际上率先实验观测到此效应，并研究CTFEL辐照强度、频率对此效应的影响和调控规律，在装置上做出原创性重要应用科研成果。这将成为在CTFEL装置上搭建的首个综合性光学实验设施，建成后将提升装置的应用技术水平、拓展应用领域，为取得更多原创性研究成果提供先进实验技术。

On the basis that the first Chinese terahertz (THz) free-electron laser (FEL or CTFEL) can provide picosecond (ps) and high-power single pulse THz radiation, we propose to establish "ps THz FEL pump-ps THz probe" system. Utilizing this advanced optical facility, we intend to study photo-detected Hall effect (PDHE) caused by proximity induced interactions in 2D TMD valleytronic materials such as monolayer MoS2 and WS2. We wish that we can be the first to be able to observe this important effect experimentally at room-temperature and in the absence of a magnetic field. We will examine how the radiation intensity and frequency of the CTFEL can affect the PDHE in a 2D TMD valleytronic material. The implementation of this project can promote greatly the technological level for the application of the CTFEL in scientific research and can extend more widely the area of the CTFEL application in order to prodece more innovative research outcomes on the basis of the CTFEL facility.