基于Ge:Ga阻挡杂质带结构的低能红外光子探测基础理论与关键技术研究

50-150微米甚长波红外探测是研究宇宙形成与演化、宇宙生命起源等重大科学问题的必要手段。由于缺乏核心探测技术，我国尚未开展红外天文领域的深空探测。为打破国外技术封锁，满足我国红外天文观测需求，基于已有工作基础，我们提出研究Ge基阻挡杂质带甚长波红外探测中的科学问题和技术。研究内容包括：锗掺镓（Ge:Ga）体系中低能光子光电相互作用机理和过程；Ge:Ga中杂质态光电跃迁波长调控方法，以及结构优化设计；暗电流机制与噪声的抑制方法；纳米陷光阵列的构筑以及光吸收增强机制；低本底浓度的浅施主能级红外吸收层与高纯无缺陷本征Ge阻挡层的关键制备技术。通过本项目实施，将自主知识产权的阻挡杂质带探测技术将由硅材料上升至锗体系，光电探测波长延伸至150微米。同时，项目将突破面向低背景、弱信号探测对象的甚长波红外探测的瓶颈技术，产生一批具有国际影响力的原始创新性成果，促进我国红外光电子学科的发展。

50-150 micron very long-wavelength infrared detection is an essential technology to study the formation and evolution of the universe and the origin of cosmic life. Lacking the core detection technology, our country has not yet carried out deep space exploration in the field of infrared astronomy. In order to break the blockade of foreign technology and meet the needs of infrared astronomical observation in China, based on our existing work, we propose to study the scientific problems and technologies in Ge-based barrier impurity band very long-wavelength infrared detection. The proposed research contents include: the mechanism and process of low-energy photon photoelectric interaction in Ge:Ga system; the effective way of tuning the wavelength of impurity photoelectric transition in Ge:Ga and the optimization of the structure; the dark current mechanism and the method of noise suppression; construction of nanomaterial arrays for light trapping and the mechanism of light absorption enhancement; the key fabrication technology of shallow donor level infrared absorption layer with low background concentration and high purity defect-free intrinsic Ge barrier layer. Through the implementation of this project, the barrier impurity band detection technology will be extended from Si-based technology to Ge-based one, with independent intellectual property rights, and the photoelectric detection wavelength will be extended to 150 microns. At the same time, the project will break through the bottleneck technology of very long-wavelength infrared detection for low background and weak signal objects, produce a number of original and innovative achievements with international influence, and promote the development of infrared optoelectronics in China.