基于体电阻淬灭效应的混合集成单光子雪崩光电二极管阵列成像器件关键技术研究

超快单光子成像器件是诸多国家重大战略和科学研究领域（天文观测、高能粒子探测、量子信息等）的核心器件。本项目从各领域对同时具备高时间响应速度、高空间分辨率、高信噪比、小型化的超快单光子成像器件的迫切需求出发，研发基于体电阻猝灭模式的单光子雪崩光电二极管阵列成像器件（SPADs）。针对SPADs器件探测效率低、光学串扰严重的瓶颈问题，拟从器件架构着手，采用体电阻代替表面电阻实现雪崩淬灭的新结构，结合双面超薄SPADs器件工艺和混合封装技术研制一种高探测效率、高密度、全集成的SPADs器件。着重研究雪崩区热载流子激发的二次光子引发邻近像素发生雪崩的光学串扰现象及物理机制，建立噪声模型，阐明噪声机理，提出降低光学串扰、提高信噪比的具体措施。本项目的开展将促进高性能超快单光子成像器件早日实用化，为诸多国家重大战略和前沿科学研究领域提供一种成像利器，从而推动天文学、物理学、医学、化学等多个学科的发展。

Single photon image sensors with picosecond temporal resolution and micrometer or nanometer spatial resolution play very important role in many areas such as space science exploration, high-energy particle identification, fluorescence lifetime imaging, high resolution imaging lidar system and quantum communication. In this proposal, we will focus on the study of two technical bottlenecks of current single photon avalanche diode arrays (SPADs), which are the low detection efficiency and the serious optical crosstalk. To improve the photon detection efficiency, bulk integrated resistor will be applied as quench resistor instead of polysilicon quench resistor fabricated in traditional devices. This kind of design in combination with the flip chip technology will enable the development of high-detection efficiency, high-density, fully integrated SPADs device. The mechanism of photons generated by the hot carrier excitation in the avalanche area which occupies the large part of optical crosstalk will be investigated in detail. A noise model will be established and the methods for reducing the optical crosstalk will be presented. The success development of this project will make the path of SPADs to large-scale application and industrialization much faster, which will be very important in some of our national strategy projects and many frontier scientific research areas.