新型自旋零能隙半导体材料的开发及其物性的研究

发展高效、低耗散的自旋电子学器件是未来电子学器件发展的必然趋势。自旋零能隙半导体（SGS）由于具有零能隙、高载流子流动性、全自旋极化及低能耗的特点，成为未来自旋电子学器件关键基础材料的理想选择，是目前材料科学前沿研究的热点材料之一。建立高效寻找SGS材料方法、开发具有高度稳定零能隙的新型SGS材料是这一领域面临的重要问题。针对这一问题，本申请以我们前期发现的两个自旋亚能带中，能隙的起源不同的观点为基础，提出利用同主族元素掺杂微调带隙从而获得自旋零能隙半导体和通过能带翻转获得稳定零能隙的新思路。通过研究材料的能带结构、合成与热处理工艺、磁性、霍尔效应及磁电阻等物理特性，开发出一系列利于实际应用的新型SGS，拓宽寻找SGS体系的范围。

The spintronic devices with the high efficiency and low energy dissipation are desired in the development of new-generation electronic devices in future. The spin gapless semiconductor (SGS) is proposed to be one of the most promising candidates as a key material in spintronic devices due to its zero energy gap, high carrier mobility, full spin-polarization of conductive electrons and low energy dissipation. Searching for new SGS and developing the SGS with highly stable zero energy gap have been the most important issue. In this project, we will propose a new idea to find SGS material according to our previous study on the different origins of the energy gap in spin-up and spin-down channels. To improve the stability of zero energy gap in SGS, a theoretical design and experimental works to investigate the reverse band structure will also be carried out. The main contents will involve the investigations on the band structure, the preparation methods, magnetism, Hall effect and magnetoresistance in this project. Finally, we expect that a series of new SGS material with excellent performances can be achieved, the field to search for SGS is broadened and a proposal to search for new SGS in high efficiency is concluded.