CuInS2基量子点可控合成及高效无镉发光二极管的设计研究

CuInS2量子点作为无镉量子点的典型代表，凭借优良的光学、光电性质及环境友好性，具有极高的研究价值与应用前景。如何实现CuInS2量子点的可控合成及发光二极管性能提升是目前CuInS2量子点相关研究所面临的两大难题。分析研究现状并基于申请人前期基础，本项目旨在通过研究CuInS2量子点合成化学中前驱体反应活性的协同作用，特别是对铟前驱体活性的调控来实现尺寸可调、单分散性良好、化学组成均一的CuInS2核量子点的控制合成；通过对量子点表/界面的研究，建立CuInS2/ZnS核壳量子点表/界面与光学性质的关系，实现高稳定性、高荧光量子产率的CuInS2/ZnS核/壳量子点的可控合成；基于高质量CuInS2/ZnS核/壳量子点，设计制作高效无镉CuInS2基量子点发光二极管。本项目希望以此为突破口，提出新的三元无镉量子点合成策略，为实现高效无镉量子点发光二极管的设计奠定基础。

CuInS2 quantum dots (QDs), serving as one of the best candidates of cadmium-free QDs, have exhibited tremendous research and application potentials, because of its excellent optical, optoelectronic and environment-benign properties. The current challenges of CuInS2 QDs development lie on synthetic control of CuInS2¬-based QDs and design of quantum dots light-emitting diodes (QLED) with highly efficient performance. Based on previous studies, this project aims primarily to achieve synthetic control of size-tunable monodisperse CuInS2 core QDs with uniform composition by systematic studies of precursors reactivities and QDs surface. By introducing entropic ligands and eliminating defects of QDs surface/interface during epitaxy of ZnS shell, we would drastically advance optical properties of CuInS2/ZnS core/shell QDs. The effects of shell thickness and ligands types on CuInS2/ZnS core/shell QDs optical properties will also be studied. Furthermore, Cd-free CuInS2-based QLED with highly efficient performance will be designed. This project should inspire developments of high-quality QDs and QLED based on Cd-free semiconductors.