1.55 μm可调谐窄线宽外腔半导体激光器的研究

可调谐外腔半导体激光器具有体积小、可调谐范围宽及窄线宽的特性，在光通讯、高分辨率光谱分析、生物医学等领域有很重要的应用。随着第五代移动通信系统的发展，可调谐激光器作为重要光源器件，需要具备宽可调谐、窄线宽的特性，以满足光通信领域的超大容量通信带宽的应用要求。现有的研究中激光器的输出光性能很难兼顾窄线宽及超宽可调谐范围输出。. 本项目选用光栅反馈，以多量子阱增益芯片为有源器件，创新性的设计了一种新的外腔半导体激光器结构。采用模拟分析和实验验证的方法对外腔半导体激光器的性能调控机制及模式竞争机制等关键问题进行研究，制备出可实现波长可调谐范围≥150 nm、频率线宽≤100kHz、边模抑制比≥50 dB、输出功率≥15 mW 激光器输出的外腔半导体激光器。本项目将为光通讯领域提供有竞争力的可调谐光源。

Based on the characteristics of small size, wide tunable range and narrow linewidth, the grating-coupled tunable external cavity semiconductor laser has important applications in many fields, including optical communication, high resolution spectral analysis and biomedicine. With the development of the fifth generation mobile communication system, tunable laser, as an important light source device, needs to have the characteristics of wide tunable and narrow linewidth, so as to meet the application requirements of super-large capacity communication bandwidth in optical communication field. In the present research, it is difficult to combine the output optical performance of laser with the output of narrow line width and ultra-wide tunable range.. Based on the grating-feedback, this project innovatively designs a new external cavity semiconductor laser structure with the multi-quantum well gain chip as the active device. By means of simulation analysis and experimental verification, the performance regulation mechanism and mode competition mechanism of the external cavity semiconductor laser are studied, and the laser output can achieve tunable wavelength range ≥150 nm, frequency linewidth ≤100kHz, side-mode suppression ratio ≥50 dB, and output power ≥15 mW. The project will provide a competitive tunable light source for optical communications