新型锰基反钙钛矿结构恒电阻率材料探索及机理研究

反钙钛矿结构锰基氮化物ANMn3(A=Cu、Ga、Zn等)具有简单晶体体结构，展现了丰富的功能属性。其宽温区低电阻率温度系数，加之高稳定性、原料廉价及环境友好等优点使之成为探索恒电阻率材料的新体系。元素掺杂是优化其性能参数的重要手段，而目前相关实验主要集中在A位掺杂，且物理机制研究尚不深入。根据此类材料的电子能带结构特点及我们的先期实验结果，本项目拟通过对ANMn3(A=Cu、Ag、Ni、Co)中的N、Mn位掺杂来调节其电子结构，进而优化其电阻率温度系数，探索具有应用前景的恒电阻率材料；同时研究掺杂样品的晶体结构、电/热输运、磁性等的演变规律及相互关联，并结合理论计算，尝试建立相应的理论模型，为探索新型宽温区恒电阻率金属材料提供参考依据。

Antiperovskite manganese compounds ANMn3 (A=Cu,Ga,Sn,and so on) have a simple crystal structure and show many interesting functional properties. Especially, it becomes an important candidate of constant resistor due to the properties including low temperature coefficient of resistance(LTCR), low pollution and cheap raw materials.Now,the exploration of unchangable resistance based on this type of material is seldom carried out, and the physical mechanism hasn't been studied throughly. In this project, we try to introduce dopants at N and Mn sites of the parent compound ANMn3(A=Cu,Ag,Ni,Co), control the electronic structure, and find several samples with LTCR ; We also detailedly characterize the sample's crystal structure and study the evolution of electronic tranport, magnetization, heat transport. Combined with the theoretical study, we attempt to present the possible physical mechanism for the LTCR and supply reference for exploring metallic LTCR materials with wide temperature range.