电沉积制备的Cu2ZnSnS4薄膜与缓冲层的界面性能直接决定了太阳电池的光伏效率。本研究项目从Cu2ZnSnS4表面形貌，钝化形式，缓冲层种类等多个方面系统研究了Cu2ZnSnS4薄膜表面状态对太阳电池光电性能的影响机制。此外，Cu2ZnSnS4/缓冲层表界面处原子互扩散和掺杂现象对Cu2ZnSnS4和缓冲层光电性能及其对太阳电池光伏表现的作用也进行了详细的探讨。该研究从Cu2ZnSnS4与缓冲层的表界面性能出发系统阐明了界面改性对Cu2ZnSnS4薄膜太阳电池光伏性能的作用机制，对Cu2ZnSnS4薄膜太阳电池的发展具有一定的指导意义。

The property of the interface between Cu2ZnSnS4 and buffer layer determine the photovoltaic performance of electrodeposited Cu2ZnSnS4 thin film solar cells. In this study, the mechanism of the effect of the Cu2ZnSnS4 film's surface properties on the optoelectronic performances of solar cell will be systematically investigated based on the surface morphology of Cu2ZnSnS4, type of passivation and kinds of buffer layers. Further more, the interdiffusion and doping phenomenon at the interface between Cu2ZnSnS4 and buffer layer will be detailed discussed related to the photovoltaic properties of Cu2ZnSnS4 thin film solar devices. From the aspect of interface modification, this work will systematically clarify the mechanism of the effect of interface modification on the photovoltaic performance of Cu2ZnSnS4 thin film solar cell, which has a guiding significance for the development of Cu2ZnSnS4 thin film solar cells.